Tunneling of holes observed at work function measurements of metal/ HfO2 / SiO2 /n-Si gate stacks

J. A. Rothschild, H. Avraham, E. Lipp, M. Eizenberg

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Abstract

The voltage bias that causes a transition from direct tunneling to Fowler-Nordheim tunneling in the current-voltage characteristic of a metal/ HfO2 / SiO2 /n-Si capacitor was measured. The transition occurs in the negative gate voltage regime and can be attributed to conduction of electrons from the metal through a defect level in the HfO2 or to conduction of holes from the Si through the valence band of the HfO2. The dependence of the determined barrier height on the gate-metal work function indicates the validity of the latter model.

Original languageEnglish
Article number122102
JournalApplied Physics Letters
Volume96
Issue number12
DOIs
StatePublished - 2010
Externally publishedYes

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