Tunneling of holes observed at work function measurements of metal/ HfO2 / SiO2 /n-Si gate stacks

J. A. Rothschild; H. Avraham; E. Lipp; M. Eizenberg

doi:10.1063/1.3360879

Tunneling of holes observed at work function measurements of metal/ HfO₂ / SiO₂ /n-Si gate stacks

J. A. Rothschild, H. Avraham, E. Lipp, M. Eizenberg

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The voltage bias that causes a transition from direct tunneling to Fowler-Nordheim tunneling in the current-voltage characteristic of a metal/ HfO₂ / SiO₂ /n-Si capacitor was measured. The transition occurs in the negative gate voltage regime and can be attributed to conduction of electrons from the metal through a defect level in the HfO₂ or to conduction of holes from the Si through the valence band of the HfO₂. The dependence of the determined barrier height on the gate-metal work function indicates the validity of the latter model.

Original language	English
Article number	122102
Journal	Applied Physics Letters
Volume	96
Issue number	12
DOIs	https://doi.org/10.1063/1.3360879
State	Published - 2010
Externally published	Yes

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title = "Tunneling of holes observed at work function measurements of metal/ HfO2 / SiO2 /n-Si gate stacks",

abstract = "The voltage bias that causes a transition from direct tunneling to Fowler-Nordheim tunneling in the current-voltage characteristic of a metal/ HfO2 / SiO2 /n-Si capacitor was measured. The transition occurs in the negative gate voltage regime and can be attributed to conduction of electrons from the metal through a defect level in the HfO2 or to conduction of holes from the Si through the valence band of the HfO2. The dependence of the determined barrier height on the gate-metal work function indicates the validity of the latter model.",

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year = "2010",

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AU - Rothschild, J. A.

AU - Avraham, H.

AU - Lipp, E.

AU - Eizenberg, M.

PY - 2010

Y1 - 2010

N2 - The voltage bias that causes a transition from direct tunneling to Fowler-Nordheim tunneling in the current-voltage characteristic of a metal/ HfO2 / SiO2 /n-Si capacitor was measured. The transition occurs in the negative gate voltage regime and can be attributed to conduction of electrons from the metal through a defect level in the HfO2 or to conduction of holes from the Si through the valence band of the HfO2. The dependence of the determined barrier height on the gate-metal work function indicates the validity of the latter model.

AB - The voltage bias that causes a transition from direct tunneling to Fowler-Nordheim tunneling in the current-voltage characteristic of a metal/ HfO2 / SiO2 /n-Si capacitor was measured. The transition occurs in the negative gate voltage regime and can be attributed to conduction of electrons from the metal through a defect level in the HfO2 or to conduction of holes from the Si through the valence band of the HfO2. The dependence of the determined barrier height on the gate-metal work function indicates the validity of the latter model.

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U2 - 10.1063/1.3360879

DO - 10.1063/1.3360879

M3 - 文章

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SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 122102

ER -

Tunneling of holes observed at work function measurements of metal/ HfO₂ / SiO₂ /n-Si gate stacks

Abstract

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