Bismuth sulfide (Bi2S3) belongs to a family of metal chalcogenides in a class of non-toxic semiconductor materials, whose importance in photovoltaic and thermoelectric applications is well recognized. We have successfully prepared crystalline Bi2S3 nanorod (NR) thin films from a solution of bismuth chloride and thioacetamide via a solution process method. A possible mechanism for the growth process of the Bi2S3 NRs is proposed. Prepared Bi2S3 NR films characterized via X-ray diffraction (XRD), energy dispersive analysis (EDX), field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), brunauer-emmett-teller (BET) surface area, and photoelectrochemical cells are studied. The morphology of the Bi2S3 NR reveals a photocurrent density of 0.20 mA/cm2 at 0 V bias condition under 1 sun illumination. The charge transport properties of the Bi2S3 NRs are studied via impedance spectroscopy analysis. This preparation method is economical for scale-up processes, and can also applied to the preparation of other metal sulfide semiconductors.
|Number of pages||8|
|Journal||Journal of Photochemistry and Photobiology A: Chemistry|
|State||Published - 1 Jan 2017|
- BiS nanorod (NR)
- Thin films