Solution processed growth and photoelectrochemistry of Bi2S3 nanorods thin film

Supriya A. Patil; Yeon Taek Hwang; Vijaykumar V. Jadhav; Kwang Ho Kim; Hak Sung Kim

doi:10.1016/j.jphotochem.2016.07.037

Solution processed growth and photoelectrochemistry of Bi₂S₃ nanorods thin film

Supriya A. Patil, Yeon Taek Hwang, Vijaykumar V. Jadhav, Kwang Ho Kim, Hak Sung Kim^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

Bismuth sulfide (Bi₂S₃) belongs to a family of metal chalcogenides in a class of non-toxic semiconductor materials, whose importance in photovoltaic and thermoelectric applications is well recognized. We have successfully prepared crystalline Bi₂S₃ nanorod (NR) thin films from a solution of bismuth chloride and thioacetamide via a solution process method. A possible mechanism for the growth process of the Bi₂S₃ NRs is proposed. Prepared Bi₂S₃ NR films characterized via X-ray diffraction (XRD), energy dispersive analysis (EDX), field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), brunauer-emmett-teller (BET) surface area, and photoelectrochemical cells are studied. The morphology of the Bi₂S₃ NR reveals a photocurrent density of 0.20 mA/cm² at 0 V bias condition under 1 sun illumination. The charge transport properties of the Bi₂S₃ NRs are studied via impedance spectroscopy analysis. This preparation method is economical for scale-up processes, and can also applied to the preparation of other metal sulfide semiconductors.

Original language	English
Pages (from-to)	174-181
Number of pages	8
Journal	Journal of Photochemistry and Photobiology A: Chemistry
Volume	332
DOIs	https://doi.org/10.1016/j.jphotochem.2016.07.037
State	Published - 1 Jan 2017
Externally published	Yes

Keywords

BiS nanorod (NR)
Photocurrent
Photoelectrochemistry
Solution-processed
Thin films

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10.1016/j.jphotochem.2016.07.037

Cite this

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title = "Solution processed growth and photoelectrochemistry of Bi2S3 nanorods thin film",

abstract = "Bismuth sulfide (Bi2S3) belongs to a family of metal chalcogenides in a class of non-toxic semiconductor materials, whose importance in photovoltaic and thermoelectric applications is well recognized. We have successfully prepared crystalline Bi2S3 nanorod (NR) thin films from a solution of bismuth chloride and thioacetamide via a solution process method. A possible mechanism for the growth process of the Bi2S3 NRs is proposed. Prepared Bi2S3 NR films characterized via X-ray diffraction (XRD), energy dispersive analysis (EDX), field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), brunauer-emmett-teller (BET) surface area, and photoelectrochemical cells are studied. The morphology of the Bi2S3 NR reveals a photocurrent density of 0.20 mA/cm2 at 0 V bias condition under 1 sun illumination. The charge transport properties of the Bi2S3 NRs are studied via impedance spectroscopy analysis. This preparation method is economical for scale-up processes, and can also applied to the preparation of other metal sulfide semiconductors.",

keywords = "BiS nanorod (NR), Photocurrent, Photoelectrochemistry, Solution-processed, Thin films",

author = "Patil, {Supriya A.} and Hwang, {Yeon Taek} and Jadhav, {Vijaykumar V.} and Kim, {Kwang Ho} and Kim, {Hak Sung}",

note = "Publisher Copyright: {\textcopyright} 2016 Elsevier B.V.",

year = "2017",

month = jan,

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doi = "10.1016/j.jphotochem.2016.07.037",

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AU - Patil, Supriya A.

AU - Hwang, Yeon Taek

AU - Jadhav, Vijaykumar V.

AU - Kim, Kwang Ho

AU - Kim, Hak Sung

PY - 2017/1/1

Y1 - 2017/1/1

N2 - Bismuth sulfide (Bi2S3) belongs to a family of metal chalcogenides in a class of non-toxic semiconductor materials, whose importance in photovoltaic and thermoelectric applications is well recognized. We have successfully prepared crystalline Bi2S3 nanorod (NR) thin films from a solution of bismuth chloride and thioacetamide via a solution process method. A possible mechanism for the growth process of the Bi2S3 NRs is proposed. Prepared Bi2S3 NR films characterized via X-ray diffraction (XRD), energy dispersive analysis (EDX), field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), brunauer-emmett-teller (BET) surface area, and photoelectrochemical cells are studied. The morphology of the Bi2S3 NR reveals a photocurrent density of 0.20 mA/cm2 at 0 V bias condition under 1 sun illumination. The charge transport properties of the Bi2S3 NRs are studied via impedance spectroscopy analysis. This preparation method is economical for scale-up processes, and can also applied to the preparation of other metal sulfide semiconductors.

AB - Bismuth sulfide (Bi2S3) belongs to a family of metal chalcogenides in a class of non-toxic semiconductor materials, whose importance in photovoltaic and thermoelectric applications is well recognized. We have successfully prepared crystalline Bi2S3 nanorod (NR) thin films from a solution of bismuth chloride and thioacetamide via a solution process method. A possible mechanism for the growth process of the Bi2S3 NRs is proposed. Prepared Bi2S3 NR films characterized via X-ray diffraction (XRD), energy dispersive analysis (EDX), field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), brunauer-emmett-teller (BET) surface area, and photoelectrochemical cells are studied. The morphology of the Bi2S3 NR reveals a photocurrent density of 0.20 mA/cm2 at 0 V bias condition under 1 sun illumination. The charge transport properties of the Bi2S3 NRs are studied via impedance spectroscopy analysis. This preparation method is economical for scale-up processes, and can also applied to the preparation of other metal sulfide semiconductors.

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