Resistivity reduction and chemical stabilization of organometallic chemical vapor deposited titanium nitride by nitrogen rf plasma

M. Danek*, M. Liao, J. Tseng, K. Littau, D. Saigal, H. Zhang, R. Mosely, M. Eizenberg

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

48 Scopus citations

Abstract

In situ, nitrogen rf plasma treatment of organometallic chemical vapor deposited (OMCVD) TiN, synthesized by thermal decomposition of tetrakis(dimethylamido) titanium, yielded films with low resistivity and enhanced chemical stability. A sequential OMCVD-plasma treatment process allowed deposition of films with bulk resistivity as low as 400 μ cm. The nitridation resulted in reduction of the carbon concentration in the films, and crystallization of TiN. The composition and electrical properties of the nitridized films were found to be stable upon air exposure. The films possess excellent step coverage (≳70% in 0.35 μm device structures with aspect ratio ∼3) and low defect density (∼0.06 cm-2 for defect size ≥0.2 μm).

Original languageEnglish
Pages (from-to)1015-1016
Number of pages2
JournalApplied Physics Letters
Volume68
Issue number7
DOIs
StatePublished - 1996
Externally publishedYes

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