Resistivity reduction and chemical stabilization of organometallic chemical vapor deposited titanium nitride by nitrogen rf plasma

M. Danek; M. Liao; J. Tseng; K. Littau; D. Saigal; H. Zhang; R. Mosely; M. Eizenberg

doi:10.1063/1.116213

Resistivity reduction and chemical stabilization of organometallic chemical vapor deposited titanium nitride by nitrogen rf plasma

M. Danek^*, M. Liao, J. Tseng, K. Littau, D. Saigal, H. Zhang, R. Mosely, M. Eizenberg

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

In situ, nitrogen rf plasma treatment of organometallic chemical vapor deposited (OMCVD) TiN, synthesized by thermal decomposition of tetrakis(dimethylamido) titanium, yielded films with low resistivity and enhanced chemical stability. A sequential OMCVD-plasma treatment process allowed deposition of films with bulk resistivity as low as 400 μ cm. The nitridation resulted in reduction of the carbon concentration in the films, and crystallization of TiN. The composition and electrical properties of the nitridized films were found to be stable upon air exposure. The films possess excellent step coverage (≳70% in 0.35 μm device structures with aspect ratio ∼3) and low defect density (∼0.06 cm-2 for defect size ≥0.2 μm).

Original language	English
Pages (from-to)	1015-1016
Number of pages	2
Journal	Applied Physics Letters
Volume	68
Issue number	7
DOIs	https://doi.org/10.1063/1.116213
State	Published - 1996
Externally published	Yes

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title = "Resistivity reduction and chemical stabilization of organometallic chemical vapor deposited titanium nitride by nitrogen rf plasma",

abstract = "In situ, nitrogen rf plasma treatment of organometallic chemical vapor deposited (OMCVD) TiN, synthesized by thermal decomposition of tetrakis(dimethylamido) titanium, yielded films with low resistivity and enhanced chemical stability. A sequential OMCVD-plasma treatment process allowed deposition of films with bulk resistivity as low as 400 μ cm. The nitridation resulted in reduction of the carbon concentration in the films, and crystallization of TiN. The composition and electrical properties of the nitridized films were found to be stable upon air exposure. The films possess excellent step coverage (≳70% in 0.35 μm device structures with aspect ratio ∼3) and low defect density (∼0.06 cm-2 for defect size ≥0.2 μm).",

author = "M. Danek and M. Liao and J. Tseng and K. Littau and D. Saigal and H. Zhang and R. Mosely and M. Eizenberg",

year = "1996",

doi = "10.1063/1.116213",

language = "英语",

volume = "68",

pages = "1015--1016",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Resistivity reduction and chemical stabilization of organometallic chemical vapor deposited titanium nitride by nitrogen rf plasma

AU - Danek, M.

AU - Liao, M.

AU - Tseng, J.

AU - Littau, K.

AU - Saigal, D.

AU - Zhang, H.

AU - Mosely, R.

AU - Eizenberg, M.

PY - 1996

Y1 - 1996

N2 - In situ, nitrogen rf plasma treatment of organometallic chemical vapor deposited (OMCVD) TiN, synthesized by thermal decomposition of tetrakis(dimethylamido) titanium, yielded films with low resistivity and enhanced chemical stability. A sequential OMCVD-plasma treatment process allowed deposition of films with bulk resistivity as low as 400 μ cm. The nitridation resulted in reduction of the carbon concentration in the films, and crystallization of TiN. The composition and electrical properties of the nitridized films were found to be stable upon air exposure. The films possess excellent step coverage (≳70% in 0.35 μm device structures with aspect ratio ∼3) and low defect density (∼0.06 cm-2 for defect size ≥0.2 μm).

AB - In situ, nitrogen rf plasma treatment of organometallic chemical vapor deposited (OMCVD) TiN, synthesized by thermal decomposition of tetrakis(dimethylamido) titanium, yielded films with low resistivity and enhanced chemical stability. A sequential OMCVD-plasma treatment process allowed deposition of films with bulk resistivity as low as 400 μ cm. The nitridation resulted in reduction of the carbon concentration in the films, and crystallization of TiN. The composition and electrical properties of the nitridized films were found to be stable upon air exposure. The films possess excellent step coverage (≳70% in 0.35 μm device structures with aspect ratio ∼3) and low defect density (∼0.06 cm-2 for defect size ≥0.2 μm).

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U2 - 10.1063/1.116213

DO - 10.1063/1.116213

M3 - 文章

AN - SCOPUS:0001461308

SN - 0003-6951

VL - 68

SP - 1015

EP - 1016

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Resistivity reduction and chemical stabilization of organometallic chemical vapor deposited titanium nitride by nitrogen rf plasma

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