Phase separation and layer sequence reversal during silicide formation with Ni-Cr alloys and Ni-Cr bilayers

A. Appelbaum*, M. Eizenberg, R. Brener

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

Solid-state reactions of thin films of Ni-Cr alloys, and Ni-Cr bilayers, with Si have been studied by Auger electron spectroscopy and x-ray diffraction. Silicide formation for the alloys which starts at ∼400 °C is completed (after 30 min anneal) for Cr-rich and Ni-rich compositions at 500 and 600 °C, respectively, with phase separation into a NiSi layer near the substrate and a CrSi2 rich layer outside. For the Cr/Ni/Si structure each of the layers reacts independently with Si; structures of Cr/Ni2Si/Si, Cr/NiSi/Si, CrSi2/NiSi/Si, and CrSi2/NiSi2/Si are obtained following 30-min anneals at 300, 400, 500, and 850 °C, respectively. For the Ni/Cr/Si structure for annealing temperatures in the range of 500-750 °C, the inner part of the Cr layer reacts with the substrate to form CrSi2, while the outer part forms a solid solution with Ni; the interaction of this solution with Si results in the inward formation of NiSi and the outward formation of CrSi2. After 850 °C anneal layer sequence reversal is observed, when a NiSi2 layer is formed adjacent to the Si substrate.

Original languageEnglish
Pages (from-to)914-919
Number of pages6
JournalJournal of Applied Physics
Volume55
Issue number4
DOIs
StatePublished - 1984
Externally publishedYes

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