TY - JOUR
T1 - Phase separation and layer sequence reversal during silicide formation with Ni-Cr alloys and Ni-Cr bilayers
AU - Appelbaum, A.
AU - Eizenberg, M.
AU - Brener, R.
PY - 1984
Y1 - 1984
N2 - Solid-state reactions of thin films of Ni-Cr alloys, and Ni-Cr bilayers, with Si have been studied by Auger electron spectroscopy and x-ray diffraction. Silicide formation for the alloys which starts at ∼400 °C is completed (after 30 min anneal) for Cr-rich and Ni-rich compositions at 500 and 600 °C, respectively, with phase separation into a NiSi layer near the substrate and a CrSi2 rich layer outside. For the Cr/Ni/Si structure each of the layers reacts independently with Si; structures of Cr/Ni2Si/Si, Cr/NiSi/Si, CrSi2/NiSi/Si, and CrSi2/NiSi2/Si are obtained following 30-min anneals at 300, 400, 500, and 850 °C, respectively. For the Ni/Cr/Si structure for annealing temperatures in the range of 500-750 °C, the inner part of the Cr layer reacts with the substrate to form CrSi2, while the outer part forms a solid solution with Ni; the interaction of this solution with Si results in the inward formation of NiSi and the outward formation of CrSi2. After 850 °C anneal layer sequence reversal is observed, when a NiSi2 layer is formed adjacent to the Si substrate.
AB - Solid-state reactions of thin films of Ni-Cr alloys, and Ni-Cr bilayers, with Si have been studied by Auger electron spectroscopy and x-ray diffraction. Silicide formation for the alloys which starts at ∼400 °C is completed (after 30 min anneal) for Cr-rich and Ni-rich compositions at 500 and 600 °C, respectively, with phase separation into a NiSi layer near the substrate and a CrSi2 rich layer outside. For the Cr/Ni/Si structure each of the layers reacts independently with Si; structures of Cr/Ni2Si/Si, Cr/NiSi/Si, CrSi2/NiSi/Si, and CrSi2/NiSi2/Si are obtained following 30-min anneals at 300, 400, 500, and 850 °C, respectively. For the Ni/Cr/Si structure for annealing temperatures in the range of 500-750 °C, the inner part of the Cr layer reacts with the substrate to form CrSi2, while the outer part forms a solid solution with Ni; the interaction of this solution with Si results in the inward formation of NiSi and the outward formation of CrSi2. After 850 °C anneal layer sequence reversal is observed, when a NiSi2 layer is formed adjacent to the Si substrate.
UR - http://www.scopus.com/inward/record.url?scp=0021375414&partnerID=8YFLogxK
U2 - 10.1063/1.333143
DO - 10.1063/1.333143
M3 - 文章
AN - SCOPUS:0021375414
SN - 0021-8979
VL - 55
SP - 914
EP - 919
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 4
ER -