Investigation of band gap, band alignment and bonding states of the (TbxSc1-x)2O3/ Si system

I. Geppert*, M. Eizenberg, N. A. Bojarczuk, L. F. Edge, M. Copel, S. Guha

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The electrical and microstructural characteristics of (Tb xSc1-x)2O3 dielectric films (x=0, 0.5, 1) prepared by the molecular beam deposition technique on silicon substrates were investigated as a function of composition. X-ray photoelectron spectroscopy was used to determine the band gap, as well as the energy band alignment with Si and the chemical structure of the films. An interfacial layer formation between Si and the dielectric films was examined by high resolution TEM analysis. The electrical properties of MOS structures were correlated with the chemical bonding states of the films.

Original languageEnglish
Title of host publicationAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6
Subtitle of host publicationNew Materials, Processes, and Equipment
Pages191-199
Number of pages9
Edition1
DOIs
StatePublished - 2010
Externally publishedYes
EventAdvanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 6 - 217th ECS Meeting - Vancouver, BC, Canada
Duration: 26 Apr 201027 Apr 2010

Publication series

NameECS Transactions
Number1
Volume28
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceAdvanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 6 - 217th ECS Meeting
CountryCanada
CityVancouver, BC
Period26/04/1027/04/10

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