Investigation of band gap, band alignment and bonding states of the (TbxSc1-x)2O3/ Si system

I. Geppert; M. Eizenberg; N. A. Bojarczuk; L. F. Edge; M. Copel; S. Guha

doi:10.1149/1.3375601

Investigation of band gap, band alignment and bonding states of the (Tb_xSc_1-x)₂O₃/ Si system

I. Geppert^*, M. Eizenberg, N. A. Bojarczuk, L. F. Edge, M. Copel, S. Guha

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The electrical and microstructural characteristics of (Tb _xSc_1-x)₂O₃ dielectric films (x=0, 0.5, 1) prepared by the molecular beam deposition technique on silicon substrates were investigated as a function of composition. X-ray photoelectron spectroscopy was used to determine the band gap, as well as the energy band alignment with Si and the chemical structure of the films. An interfacial layer formation between Si and the dielectric films was examined by high resolution TEM analysis. The electrical properties of MOS structures were correlated with the chemical bonding states of the films.

Original language	English
Title of host publication	Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6
Subtitle of host publication	New Materials, Processes, and Equipment
Publisher	Electrochemical Society Inc.
Pages	191-199
Number of pages	9
Edition	1
ISBN (Electronic)	9781607681410
ISBN (Print)	9781566777919
DOIs	https://doi.org/10.1149/1.3375601
State	Published - 2010
Externally published	Yes

Publication series

Name	ECS Transactions
Number	1
Volume	28
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

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10.1149/1.3375601

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Geppert, I., Eizenberg, M., Bojarczuk, N. A., Edge, L. F., Copel, M., & Guha, S. (2010). Investigation of band gap, band alignment and bonding states of the (Tb_xSc_1-x)₂O₃/ Si system. In Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment (1 ed., pp. 191-199). (ECS Transactions; Vol. 28, No. 1). Electrochemical Society Inc.. https://doi.org/10.1149/1.3375601

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title = "Investigation of band gap, band alignment and bonding states of the (TbxSc1-x)2O3/ Si system",

abstract = "The electrical and microstructural characteristics of (Tb xSc1-x)2O3 dielectric films (x=0, 0.5, 1) prepared by the molecular beam deposition technique on silicon substrates were investigated as a function of composition. X-ray photoelectron spectroscopy was used to determine the band gap, as well as the energy band alignment with Si and the chemical structure of the films. An interfacial layer formation between Si and the dielectric films was examined by high resolution TEM analysis. The electrical properties of MOS structures were correlated with the chemical bonding states of the films.",

author = "I. Geppert and M. Eizenberg and Bojarczuk, {N. A.} and Edge, {L. F.} and M. Copel and S. Guha",

year = "2010",

doi = "10.1149/1.3375601",

language = "英语",

isbn = "9781566777919",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

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Geppert, I, Eizenberg, M, Bojarczuk, NA, Edge, LF, Copel, M & Guha, S 2010, Investigation of band gap, band alignment and bonding states of the (Tb_xSc_1-x)₂O₃/ Si system. in Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment. 1 edn, ECS Transactions, no. 1, vol. 28, Electrochemical Society Inc., pp. 191-199. https://doi.org/10.1149/1.3375601

Investigation of band gap, band alignment and bonding states of the (Tb_xSc_1-x)₂O₃/ Si system. / Geppert, I.; Eizenberg, M.; Bojarczuk, N. A. et al.
Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment. 1. ed. Electrochemical Society Inc., 2010. p. 191-199 (ECS Transactions; Vol. 28, No. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Edge, L. F.

AU - Copel, M.

AU - Guha, S.

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Geppert I, Eizenberg M, Bojarczuk NA, Edge LF, Copel M, Guha S. Investigation of band gap, band alignment and bonding states of the (Tb_xSc_1-x)₂O₃/ Si system. In Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment. 1 ed. Electrochemical Society Inc. 2010. p. 191-199. (ECS Transactions; 1). doi: 10.1149/1.3375601

Investigation of band gap, band alignment and bonding states of the (Tb_xSc_1-x)₂O₃/ Si system

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