Impact of forming gas annealing on the degradation dynamics of Ge-based MOS stacks

Fernando L. Aguirre, Sebastian M. Pazos, Felix Palumbo, Sivan Fadida, Roy Winter, Moshe Eizenberg

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Influence of forming gas annealing (FGA) on multi-layered Ge based MOS capacitors is analyzed in terms of the C-V hysteresis and flat band voltage shifts for both negative and positive stress fields. It is found, that the FGA (H2/N2) treatment does not affect the electron trapping observed at positive stress bias, while it reduces the positive charge trapping in high-K/Ge stacks for stress at negative bias, which is a common trend regardless of the Al2O3/HfMOx stack. It indicates that a considerable part of the interface defects with energies close to the valence band existing in the oxide-semiconductor interface result passivated during the FGA. Furthermore, no time dependence is found for the stressing results.

Original languageEnglish
Title of host publication2018 IEEE International Reliability Physics Symposium, IRPS 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesPGD.31-PGD.35
ISBN (Electronic)9781538654798
DOIs
StatePublished - 25 May 2018
Externally publishedYes
Event2018 IEEE International Reliability Physics Symposium, IRPS 2018 - Burlingame, United States
Duration: 11 Mar 201815 Mar 2018

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2018-March
ISSN (Print)1541-7026

Conference

Conference2018 IEEE International Reliability Physics Symposium, IRPS 2018
CountryUnited States
CityBurlingame
Period11/03/1815/03/18

Keywords

  • CV-hysteresis
  • Germanium
  • HfO
  • High-K
  • multi-layer MOS

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