@inproceedings{0d7b8551bdf0435aac37cf87f12b859e,
title = "Impact of forming gas annealing on the degradation dynamics of Ge-based MOS stacks",
abstract = "Influence of forming gas annealing (FGA) on multi-layered Ge based MOS capacitors is analyzed in terms of the C-V hysteresis and flat band voltage shifts for both negative and positive stress fields. It is found, that the FGA (H2/N2) treatment does not affect the electron trapping observed at positive stress bias, while it reduces the positive charge trapping in high-K/Ge stacks for stress at negative bias, which is a common trend regardless of the Al2O3/HfMOx stack. It indicates that a considerable part of the interface defects with energies close to the valence band existing in the oxide-semiconductor interface result passivated during the FGA. Furthermore, no time dependence is found for the stressing results.",
keywords = "CV-hysteresis, Germanium, HfO, High-K, multi-layer MOS",
author = "Aguirre, {Fernando L.} and Pazos, {Sebastian M.} and Felix Palumbo and Sivan Fadida and Roy Winter and Moshe Eizenberg",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 IEEE International Reliability Physics Symposium, IRPS 2018 ; Conference date: 11-03-2018 Through 15-03-2018",
year = "2018",
month = may,
day = "25",
doi = "10.1109/IRPS.2018.8353663",
language = "英语",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "PGD.31--PGD.35",
booktitle = "2018 IEEE International Reliability Physics Symposium, IRPS 2018",
address = "United States",
}