Hindered transformation of Pd₂Ge to PdGe in the Pd/a-Ge:H system

TY - JOUR

T1 - Hindered transformation of Pd2Ge to PdGe in the Pd/a-Ge:H system

AU - Edelman, F.

AU - Cytermann, C.

AU - Brener, R.

AU - Eizenberg, M.

AU - Weil, R.

AU - Beyer, W.

PY - 1993

Y1 - 1993

N2 - A comparative study of the interfacial reactions between Pd and a-Ge:H, deposited at TS=150°C (low temperature, LT) and at T S=200, 300°C (high temperature, HT), was carried out by x-ray diffraction and Auger electron spectroscopy after sample annealing in the regime of T=200-300°C and t=1/4-4 h. It was found that the Pd/a-Ge:H(LT) formed a much more stable Pd2Ge interfacial layer, compared to the Pd/a-Ge:H(HT) system in which the Pd2Ge was transformed to PdGe. The main difference between the LT- and the HT-a-Ge:H films is probably the structure of the material. Whereas the HT films are compact, the LT-a-Ge films contain a network of voids which slow down the diffusion of Ge to the interface.

AB - A comparative study of the interfacial reactions between Pd and a-Ge:H, deposited at TS=150°C (low temperature, LT) and at T S=200, 300°C (high temperature, HT), was carried out by x-ray diffraction and Auger electron spectroscopy after sample annealing in the regime of T=200-300°C and t=1/4-4 h. It was found that the Pd/a-Ge:H(LT) formed a much more stable Pd2Ge interfacial layer, compared to the Pd/a-Ge:H(HT) system in which the Pd2Ge was transformed to PdGe. The main difference between the LT- and the HT-a-Ge:H films is probably the structure of the material. Whereas the HT films are compact, the LT-a-Ge films contain a network of voids which slow down the diffusion of Ge to the interface.

UR - http://www.scopus.com/inward/record.url?scp=36449002128&partnerID=8YFLogxK

U2 - 10.1063/1.353449

DO - 10.1063/1.353449

M3 - 文章

AN - SCOPUS:36449002128

SN - 0021-8979

VL - 73

SP - 8309

EP - 8312

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

ER -