Hindered transformation of Pd2Ge to PdGe in the Pd/a-Ge:H system

F. Edelman*, C. Cytermann, R. Brener, M. Eizenberg, R. Weil, W. Beyer

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

A comparative study of the interfacial reactions between Pd and a-Ge:H, deposited at TS=150°C (low temperature, LT) and at T S=200, 300°C (high temperature, HT), was carried out by x-ray diffraction and Auger electron spectroscopy after sample annealing in the regime of T=200-300°C and t=1/4-4 h. It was found that the Pd/a-Ge:H(LT) formed a much more stable Pd2Ge interfacial layer, compared to the Pd/a-Ge:H(HT) system in which the Pd2Ge was transformed to PdGe. The main difference between the LT- and the HT-a-Ge:H films is probably the structure of the material. Whereas the HT films are compact, the LT-a-Ge films contain a network of voids which slow down the diffusion of Ge to the interface.

Original languageEnglish
Pages (from-to)8309-8312
Number of pages4
JournalJournal of Applied Physics
Volume73
Issue number12
DOIs
StatePublished - 1993
Externally publishedYes

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