Abstract
A comparative study of the interfacial reactions between Pd and a-Ge:H, deposited at TS=150°C (low temperature, LT) and at T S=200, 300°C (high temperature, HT), was carried out by x-ray diffraction and Auger electron spectroscopy after sample annealing in the regime of T=200-300°C and t=1/4-4 h. It was found that the Pd/a-Ge:H(LT) formed a much more stable Pd2Ge interfacial layer, compared to the Pd/a-Ge:H(HT) system in which the Pd2Ge was transformed to PdGe. The main difference between the LT- and the HT-a-Ge:H films is probably the structure of the material. Whereas the HT films are compact, the LT-a-Ge films contain a network of voids which slow down the diffusion of Ge to the interface.
Original language | English |
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Pages (from-to) | 8309-8312 |
Number of pages | 4 |
Journal | Journal of Applied Physics |
Volume | 73 |
Issue number | 12 |
DOIs | |
State | Published - 1993 |
Externally published | Yes |