Fermi level pinning in metal/Al2O3/InGaAs gate stack after post metallization annealing

R. Winter, I. Krylov, C. Cytermann, K. Tang, J. Ahn, P. C. McIntyre, M. Eizenberg

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

The effect of post metal deposition annealing on the effective work function in metal/Al2O3/InGaAs gate stacks was investigated. The effective work functions of different metal gates (Al, Au, and Pt) were measured. Flat band voltage shifts for these and other metals studied suggest that their Fermi levels become pinned after the post-metallization vacuum annealing. Moreover, there is a difference between the measured effective work functions of Al and Pt, and the reported vacuum work function of these metals after annealing. We propose that this phenomenon is caused by charging of indium and gallium induced traps at the annealed metal/Al2O3 interface.

Original languageEnglish
Article number055302
JournalJournal of Applied Physics
Volume118
Issue number5
DOIs
StatePublished - 7 Aug 2015
Externally publishedYes

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