Fermi level pinning in metal/Al2O3/InGaAs gate stack after post metallization annealing

R. Winter; I. Krylov; C. Cytermann; K. Tang; J. Ahn; P. C. McIntyre; M. Eizenberg

doi:10.1063/1.4928158

Fermi level pinning in metal/Al₂O₃/InGaAs gate stack after post metallization annealing

R. Winter, I. Krylov, C. Cytermann, K. Tang, J. Ahn, P. C. McIntyre, M. Eizenberg

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The effect of post metal deposition annealing on the effective work function in metal/Al₂O₃/InGaAs gate stacks was investigated. The effective work functions of different metal gates (Al, Au, and Pt) were measured. Flat band voltage shifts for these and other metals studied suggest that their Fermi levels become pinned after the post-metallization vacuum annealing. Moreover, there is a difference between the measured effective work functions of Al and Pt, and the reported vacuum work function of these metals after annealing. We propose that this phenomenon is caused by charging of indium and gallium induced traps at the annealed metal/Al₂O₃ interface.

Original language	English
Article number	055302
Journal	Journal of Applied Physics
Volume	118
Issue number	5
DOIs	https://doi.org/10.1063/1.4928158
State	Published - 7 Aug 2015
Externally published	Yes

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title = "Fermi level pinning in metal/Al2O3/InGaAs gate stack after post metallization annealing",

abstract = "The effect of post metal deposition annealing on the effective work function in metal/Al2O3/InGaAs gate stacks was investigated. The effective work functions of different metal gates (Al, Au, and Pt) were measured. Flat band voltage shifts for these and other metals studied suggest that their Fermi levels become pinned after the post-metallization vacuum annealing. Moreover, there is a difference between the measured effective work functions of Al and Pt, and the reported vacuum work function of these metals after annealing. We propose that this phenomenon is caused by charging of indium and gallium induced traps at the annealed metal/Al2O3 interface.",

author = "R. Winter and I. Krylov and C. Cytermann and K. Tang and J. Ahn and McIntyre, {P. C.} and M. Eizenberg",

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T1 - Fermi level pinning in metal/Al2O3/InGaAs gate stack after post metallization annealing

AU - Winter, R.

AU - Krylov, I.

AU - Cytermann, C.

AU - Tang, K.

AU - Ahn, J.

AU - McIntyre, P. C.

AU - Eizenberg, M.

PY - 2015/8/7

Y1 - 2015/8/7

N2 - The effect of post metal deposition annealing on the effective work function in metal/Al2O3/InGaAs gate stacks was investigated. The effective work functions of different metal gates (Al, Au, and Pt) were measured. Flat band voltage shifts for these and other metals studied suggest that their Fermi levels become pinned after the post-metallization vacuum annealing. Moreover, there is a difference between the measured effective work functions of Al and Pt, and the reported vacuum work function of these metals after annealing. We propose that this phenomenon is caused by charging of indium and gallium induced traps at the annealed metal/Al2O3 interface.

AB - The effect of post metal deposition annealing on the effective work function in metal/Al2O3/InGaAs gate stacks was investigated. The effective work functions of different metal gates (Al, Au, and Pt) were measured. Flat band voltage shifts for these and other metals studied suggest that their Fermi levels become pinned after the post-metallization vacuum annealing. Moreover, there is a difference between the measured effective work functions of Al and Pt, and the reported vacuum work function of these metals after annealing. We propose that this phenomenon is caused by charging of indium and gallium induced traps at the annealed metal/Al2O3 interface.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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ER -

Fermi level pinning in metal/Al₂O₃/InGaAs gate stack after post metallization annealing

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