Electrical properties of Sb implanted Si1-xGex alloy layers

Z. Atzmon; M. Eizenberg; Y. Shacham-Diamand; J. W. Mayer; F. Schäffler

doi:10.1063/1.108043

Electrical properties of Sb implanted Si_1-xGe_x alloy layers

Z. Atzmon^*, M. Eizenberg, Y. Shacham-Diamand, J. W. Mayer, F. Schäffler

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Electrical properties of Sb implanted strained Si_1-xGe _x alloy layers are reported. Two sets of Si_1-xGe _x epilayers with compositions of x=0.08 and 0.18, MBE grown on (100)Si substrates, were implanted at room temperature with Sb⁺ ions at energies of 200 and 100 keV, respectively, and doses of 10¹³ and 10¹⁵ cm^-2. Secondary-ion mass spectrometry and spreading resistance profiling measurements show that Sb implantation, with a dose below the critical value for amorphization (10¹³ cm^-2), formed a p-type region upon annealing at 500°C. Only higher temperature anneals transformed the implanted layer into the expected n-type doping. Maximal values of electrical activity (45±10%) and mobility were obtained in this case only at temperatures around 800-900°C. For the high dose implantation (10¹⁵ cm^-2), it was found that the highest activation efficiency at the implantation profile peak was obtained at 500-600°C, while at the end-of-range region the activation efficiency was very low.

Original language	English
Pages (from-to)	2902-2904
Number of pages	3
Journal	Applied Physics Letters
Volume	61
Issue number	24
DOIs	https://doi.org/10.1063/1.108043
State	Published - 1992
Externally published	Yes

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@article{249ace158669497194ce58bf61d8f78b,

title = "Electrical properties of Sb implanted Si1-xGex alloy layers",

abstract = "Electrical properties of Sb implanted strained Si1-xGe x alloy layers are reported. Two sets of Si1-xGe x epilayers with compositions of x=0.08 and 0.18, MBE grown on (100)Si substrates, were implanted at room temperature with Sb+ ions at energies of 200 and 100 keV, respectively, and doses of 1013 and 1015 cm-2. Secondary-ion mass spectrometry and spreading resistance profiling measurements show that Sb implantation, with a dose below the critical value for amorphization (1013 cm-2), formed a p-type region upon annealing at 500°C. Only higher temperature anneals transformed the implanted layer into the expected n-type doping. Maximal values of electrical activity (45±10%) and mobility were obtained in this case only at temperatures around 800-900°C. For the high dose implantation (1015 cm-2), it was found that the highest activation efficiency at the implantation profile peak was obtained at 500-600°C, while at the end-of-range region the activation efficiency was very low.",

author = "Z. Atzmon and M. Eizenberg and Y. Shacham-Diamand and Mayer, {J. W.} and F. Sch{\"a}ffler",

year = "1992",

doi = "10.1063/1.108043",

language = "英语",

volume = "61",

pages = "2902--2904",

journal = "Applied Physics Letters",

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T1 - Electrical properties of Sb implanted Si1-xGex alloy layers

AU - Atzmon, Z.

AU - Eizenberg, M.

AU - Shacham-Diamand, Y.

AU - Mayer, J. W.

AU - Schäffler, F.

PY - 1992

Y1 - 1992

N2 - Electrical properties of Sb implanted strained Si1-xGe x alloy layers are reported. Two sets of Si1-xGe x epilayers with compositions of x=0.08 and 0.18, MBE grown on (100)Si substrates, were implanted at room temperature with Sb+ ions at energies of 200 and 100 keV, respectively, and doses of 1013 and 1015 cm-2. Secondary-ion mass spectrometry and spreading resistance profiling measurements show that Sb implantation, with a dose below the critical value for amorphization (1013 cm-2), formed a p-type region upon annealing at 500°C. Only higher temperature anneals transformed the implanted layer into the expected n-type doping. Maximal values of electrical activity (45±10%) and mobility were obtained in this case only at temperatures around 800-900°C. For the high dose implantation (1015 cm-2), it was found that the highest activation efficiency at the implantation profile peak was obtained at 500-600°C, while at the end-of-range region the activation efficiency was very low.

AB - Electrical properties of Sb implanted strained Si1-xGe x alloy layers are reported. Two sets of Si1-xGe x epilayers with compositions of x=0.08 and 0.18, MBE grown on (100)Si substrates, were implanted at room temperature with Sb+ ions at energies of 200 and 100 keV, respectively, and doses of 1013 and 1015 cm-2. Secondary-ion mass spectrometry and spreading resistance profiling measurements show that Sb implantation, with a dose below the critical value for amorphization (1013 cm-2), formed a p-type region upon annealing at 500°C. Only higher temperature anneals transformed the implanted layer into the expected n-type doping. Maximal values of electrical activity (45±10%) and mobility were obtained in this case only at temperatures around 800-900°C. For the high dose implantation (1015 cm-2), it was found that the highest activation efficiency at the implantation profile peak was obtained at 500-600°C, while at the end-of-range region the activation efficiency was very low.

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U2 - 10.1063/1.108043

DO - 10.1063/1.108043

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VL - 61

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EP - 2904

JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Electrical properties of Sb implanted Si_1-xGe_x alloy layers

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