Electrical properties of Sb implanted strained Si1-xGe x alloy layers are reported. Two sets of Si1-xGe x epilayers with compositions of x=0.08 and 0.18, MBE grown on (100)Si substrates, were implanted at room temperature with Sb+ ions at energies of 200 and 100 keV, respectively, and doses of 1013 and 1015 cm-2. Secondary-ion mass spectrometry and spreading resistance profiling measurements show that Sb implantation, with a dose below the critical value for amorphization (1013 cm-2), formed a p-type region upon annealing at 500°C. Only higher temperature anneals transformed the implanted layer into the expected n-type doping. Maximal values of electrical activity (45±10%) and mobility were obtained in this case only at temperatures around 800-900°C. For the high dose implantation (1015 cm-2), it was found that the highest activation efficiency at the implantation profile peak was obtained at 500-600°C, while at the end-of-range region the activation efficiency was very low.