Determination of the dielectric constant of InGaAs based gate stacks by a modified thickness series method

Igor Krylov*, Moshe Eizenberg, Dan Ritter

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

The conventional thickness series method for the determination of the dielectric constant of silicon based gate stacks is not applicable for InGaAs based gate stacks due to the low density of states of the semiconductor. Here, we propose a modification of the thickness series method, to alleviate this problem. Since saturation of the accumulation capacitance is not obtained, we propose to measure the accumulation capacitance at a constant effective electric field. The limitations and accuracy of the proposed method are addressed experimentally and theoretically.

Original languageEnglish
Article number203506
JournalApplied Physics Letters
Volume105
Issue number20
DOIs
StatePublished - 17 Nov 2014
Externally publishedYes

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