Determination of the dielectric constant of InGaAs based gate stacks by a modified thickness series method

Igor Krylov; Moshe Eizenberg; Dan Ritter

doi:10.1063/1.4902114

Determination of the dielectric constant of InGaAs based gate stacks by a modified thickness series method

Igor Krylov^*, Moshe Eizenberg, Dan Ritter

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The conventional thickness series method for the determination of the dielectric constant of silicon based gate stacks is not applicable for InGaAs based gate stacks due to the low density of states of the semiconductor. Here, we propose a modification of the thickness series method, to alleviate this problem. Since saturation of the accumulation capacitance is not obtained, we propose to measure the accumulation capacitance at a constant effective electric field. The limitations and accuracy of the proposed method are addressed experimentally and theoretically.

Original language	English
Article number	203506
Journal	Applied Physics Letters
Volume	105
Issue number	20
DOIs	https://doi.org/10.1063/1.4902114
State	Published - 17 Nov 2014
Externally published	Yes

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10.1063/1.4902114

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title = "Determination of the dielectric constant of InGaAs based gate stacks by a modified thickness series method",

abstract = "The conventional thickness series method for the determination of the dielectric constant of silicon based gate stacks is not applicable for InGaAs based gate stacks due to the low density of states of the semiconductor. Here, we propose a modification of the thickness series method, to alleviate this problem. Since saturation of the accumulation capacitance is not obtained, we propose to measure the accumulation capacitance at a constant effective electric field. The limitations and accuracy of the proposed method are addressed experimentally and theoretically.",

author = "Igor Krylov and Moshe Eizenberg and Dan Ritter",

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AU - Krylov, Igor

AU - Eizenberg, Moshe

AU - Ritter, Dan

PY - 2014/11/17

Y1 - 2014/11/17

N2 - The conventional thickness series method for the determination of the dielectric constant of silicon based gate stacks is not applicable for InGaAs based gate stacks due to the low density of states of the semiconductor. Here, we propose a modification of the thickness series method, to alleviate this problem. Since saturation of the accumulation capacitance is not obtained, we propose to measure the accumulation capacitance at a constant effective electric field. The limitations and accuracy of the proposed method are addressed experimentally and theoretically.

AB - The conventional thickness series method for the determination of the dielectric constant of silicon based gate stacks is not applicable for InGaAs based gate stacks due to the low density of states of the semiconductor. Here, we propose a modification of the thickness series method, to alleviate this problem. Since saturation of the accumulation capacitance is not obtained, we propose to measure the accumulation capacitance at a constant effective electric field. The limitations and accuracy of the proposed method are addressed experimentally and theoretically.

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DO - 10.1063/1.4902114

M3 - 文章

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VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

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Determination of the dielectric constant of InGaAs based gate stacks by a modified thickness series method

Abstract

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