Band offsets determination and interfacial chemical properties of the Al2 O3 /GaSb system

I. Geppert*, M. Eizenberg, A. Ali, S. Datta

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

28 Scopus citations


Band offsets of the Al2 O3 /GaSb system and various surface passivation treatments of the GaSb substrate by HCl, NH4 OH, and (NH4)2 S solutions were investigated by x-ray photoelectron spectroscopy. The extracted conduction and valence band offsets values of Al2 O3 relative to GaSb are 2.4±0.1 eV and 3.4±0.2 eV, respectively. The presence of Ga-O and Sb-O bonds was detected after NH4 OH surface treatment. In contrast, (NH 4)2 S and HCl solutions inhibit the Sb oxide formation. The lowest amount of Ga-O bands was obtained for (NH4)2 S passivation. These results correlate with capacitance-voltage (C-V) measurements of Pd-Au/ Al2 O3 /GaSb stacks which yielded the best characteristics for the S-based passivation.

Original languageEnglish
Article number162109
JournalApplied Physics Letters
Issue number16
StatePublished - 18 Oct 2010
Externally publishedYes


Dive into the research topics of 'Band offsets determination and interfacial chemical properties of the Al<sub>2</sub> O<sub>3</sub> /GaSb system'. Together they form a unique fingerprint.

Cite this