Band offsets determination and interfacial chemical properties of the Al2 O3 /GaSb system

I. Geppert; M. Eizenberg; A. Ali; S. Datta

doi:10.1063/1.3499655

Band offsets determination and interfacial chemical properties of the Al₂ O₃ /GaSb system

I. Geppert^*, M. Eizenberg, A. Ali, S. Datta

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

Band offsets of the Al₂ O₃ /GaSb system and various surface passivation treatments of the GaSb substrate by HCl, NH₄ OH, and (NH₄)₂ S solutions were investigated by x-ray photoelectron spectroscopy. The extracted conduction and valence band offsets values of Al₂ O₃ relative to GaSb are 2.4±0.1 eV and 3.4±0.2 eV, respectively. The presence of Ga-O and Sb-O bonds was detected after NH₄ OH surface treatment. In contrast, (NH ₄)₂ S and HCl solutions inhibit the Sb oxide formation. The lowest amount of Ga-O bands was obtained for (NH₄)₂ S passivation. These results correlate with capacitance-voltage (C-V) measurements of Pd-Au/ Al₂ O₃ /GaSb stacks which yielded the best characteristics for the S-based passivation.

Original language	English
Article number	162109
Journal	Applied Physics Letters
Volume	97
Issue number	16
DOIs	https://doi.org/10.1063/1.3499655
State	Published - 18 Oct 2010
Externally published	Yes

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title = "Band offsets determination and interfacial chemical properties of the Al2 O3 /GaSb system",

abstract = "Band offsets of the Al2 O3 /GaSb system and various surface passivation treatments of the GaSb substrate by HCl, NH4 OH, and (NH4)2 S solutions were investigated by x-ray photoelectron spectroscopy. The extracted conduction and valence band offsets values of Al2 O3 relative to GaSb are 2.4±0.1 eV and 3.4±0.2 eV, respectively. The presence of Ga-O and Sb-O bonds was detected after NH4 OH surface treatment. In contrast, (NH 4)2 S and HCl solutions inhibit the Sb oxide formation. The lowest amount of Ga-O bands was obtained for (NH4)2 S passivation. These results correlate with capacitance-voltage (C-V) measurements of Pd-Au/ Al2 O3 /GaSb stacks which yielded the best characteristics for the S-based passivation.",

author = "I. Geppert and M. Eizenberg and A. Ali and S. Datta",

note = "Funding Information: This work was supported by the Russell Berrie Nanotechnology Institute at the Technion. ",

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doi = "10.1063/1.3499655",

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T1 - Band offsets determination and interfacial chemical properties of the Al2 O3 /GaSb system

AU - Geppert, I.

AU - Eizenberg, M.

AU - Ali, A.

AU - Datta, S.

N1 - Funding Information: This work was supported by the Russell Berrie Nanotechnology Institute at the Technion.

PY - 2010/10/18

Y1 - 2010/10/18

N2 - Band offsets of the Al2 O3 /GaSb system and various surface passivation treatments of the GaSb substrate by HCl, NH4 OH, and (NH4)2 S solutions were investigated by x-ray photoelectron spectroscopy. The extracted conduction and valence band offsets values of Al2 O3 relative to GaSb are 2.4±0.1 eV and 3.4±0.2 eV, respectively. The presence of Ga-O and Sb-O bonds was detected after NH4 OH surface treatment. In contrast, (NH 4)2 S and HCl solutions inhibit the Sb oxide formation. The lowest amount of Ga-O bands was obtained for (NH4)2 S passivation. These results correlate with capacitance-voltage (C-V) measurements of Pd-Au/ Al2 O3 /GaSb stacks which yielded the best characteristics for the S-based passivation.

AB - Band offsets of the Al2 O3 /GaSb system and various surface passivation treatments of the GaSb substrate by HCl, NH4 OH, and (NH4)2 S solutions were investigated by x-ray photoelectron spectroscopy. The extracted conduction and valence band offsets values of Al2 O3 relative to GaSb are 2.4±0.1 eV and 3.4±0.2 eV, respectively. The presence of Ga-O and Sb-O bonds was detected after NH4 OH surface treatment. In contrast, (NH 4)2 S and HCl solutions inhibit the Sb oxide formation. The lowest amount of Ga-O bands was obtained for (NH4)2 S passivation. These results correlate with capacitance-voltage (C-V) measurements of Pd-Au/ Al2 O3 /GaSb stacks which yielded the best characteristics for the S-based passivation.

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JO - Applied Physics Letters

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ER -

Band offsets determination and interfacial chemical properties of the Al₂ O₃ /GaSb system

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