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A charge-trapping memory structure featuring low-voltage high-speed operation and 250°C retention
C. Y. Peng*, W. Q. Zhang, X. Sun, Z. G. Liu, Sharon Cui, T. P. Ma, Lior Kornblum, Moshe Eizenberg
*Corresponding author for this work
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review