A charge-trapping memory structure featuring low-voltage high-speed operation and 250°C retention

C. Y. Peng*, W. Q. Zhang, X. Sun, Z. G. Liu, Sharon Cui, T. P. Ma, Lior Kornblum, Moshe Eizenberg

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We have demonstrated that MAD-Al2O3 is an excellent candidate for the tunnel, as well as for the blocking dielectrics in NAND-type memories. Despite the limited minority carrier generation rate, the MANAS capacitors have already demonstrated superb memory characteristics, especially the 250C retention, which we believe is exceptional and unprecedented. The process simplicity is also an attractive feature, making the MANAS structure viable for future generations of non-volatile memories.

Original languageEnglish
Title of host publication68th Device Research Conference, DRC 2010
Pages261-262
Number of pages2
DOIs
StatePublished - 2010
Externally publishedYes
Event68th Device Research Conference, DRC 2010 - Notre Dame, IN, United States
Duration: 21 Jun 201023 Jun 2010

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Conference

Conference68th Device Research Conference, DRC 2010
CountryUnited States
CityNotre Dame, IN
Period21/06/1023/06/10

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