@inproceedings{0bb8dcede6ec429788a5b4a441cd8017,
title = "A charge-trapping memory structure featuring low-voltage high-speed operation and 250°C retention",
abstract = "We have demonstrated that MAD-Al2O3 is an excellent candidate for the tunnel, as well as for the blocking dielectrics in NAND-type memories. Despite the limited minority carrier generation rate, the MANAS capacitors have already demonstrated superb memory characteristics, especially the 250C retention, which we believe is exceptional and unprecedented. The process simplicity is also an attractive feature, making the MANAS structure viable for future generations of non-volatile memories.",
author = "Peng, {C. Y.} and Zhang, {W. Q.} and X. Sun and Liu, {Z. G.} and Sharon Cui and Ma, {T. P.} and Lior Kornblum and Moshe Eizenberg",
year = "2010",
doi = "10.1109/DRC.2010.5551969",
language = "英语",
isbn = "9781424478705",
series = "Device Research Conference - Conference Digest, DRC",
pages = "261--262",
booktitle = "68th Device Research Conference, DRC 2010",
note = "68th Device Research Conference, DRC 2010 ; Conference date: 21-06-2010 Through 23-06-2010",
}