A systematical investigation of layer growth rate, impurity level and morphology evolution in TiO2 thin films grown by ALD between 100 and 300 °C

Bingbing Xia*, Jean Jacques Ganem*, Emrick Briand, Sébastien Steydli, Aleksandra Wanda Baron-Wiecheć, Ian Vickridge

*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

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Engineering & Materials Science

Chemical Compounds

Physics & Astronomy