A systematical investigation of layer growth rate, impurity level and morphology evolution in TiO₂ thin films grown by ALD between 100 and 300 °C

TY - JOUR

T1 - A systematical investigation of layer growth rate, impurity level and morphology evolution in TiO2 thin films grown by ALD between 100 and 300 °C

AU - Xia, Bingbing

AU - Ganem, Jean Jacques

AU - Briand, Emrick

AU - Steydli, Sébastien

AU - Baron-Wiecheć, Aleksandra Wanda

AU - Vickridge, Ian

N1 - Publisher Copyright: © 2023

PY - 2023/10

Y1 - 2023/10

N2 - TiO2 thin films prepared by atomic layer deposition (ALD) have attracted great attention due to the widespread application of the oxide as a promising charge storage material for lithium or proton batteries. In this work, we study TiO2 film grown on Si substrates by atomic layer deposition with tetrakis (dimethylamino) titanium as metal precursor (TDMAT) and water vapour as an oxidant. The chemical composition and impurity content of the film as a function of growth temperature is studied by Ion Beam Analysis (IBA). D2O (99.8%) was used as oxidant to study the film growth to distinguish between hydrogen atoms originating from the water oxidant or the metal precursor. Combining ellipsometry with Rutherford Backscattering Spectrometry (RBS), Nuclear Reaction Analysis (NRA) and Elastic Recoil Detection Analysis (ERDA) reveals film density as a function of growth temperature. Atomic force microscopy (AFM) was used to characterize the film surface structure. By investigating the structural and compositional range of ALD TiO2 films will open the new opportunities of application.

AB - TiO2 thin films prepared by atomic layer deposition (ALD) have attracted great attention due to the widespread application of the oxide as a promising charge storage material for lithium or proton batteries. In this work, we study TiO2 film grown on Si substrates by atomic layer deposition with tetrakis (dimethylamino) titanium as metal precursor (TDMAT) and water vapour as an oxidant. The chemical composition and impurity content of the film as a function of growth temperature is studied by Ion Beam Analysis (IBA). D2O (99.8%) was used as oxidant to study the film growth to distinguish between hydrogen atoms originating from the water oxidant or the metal precursor. Combining ellipsometry with Rutherford Backscattering Spectrometry (RBS), Nuclear Reaction Analysis (NRA) and Elastic Recoil Detection Analysis (ERDA) reveals film density as a function of growth temperature. Atomic force microscopy (AFM) was used to characterize the film surface structure. By investigating the structural and compositional range of ALD TiO2 films will open the new opportunities of application.

KW - Atomic layer deposition (ALD)

KW - Ion beam analysis (IBA)

KW - Thin film

KW - TiO

UR - http://www.scopus.com/inward/record.url?scp=85165650874&partnerID=8YFLogxK

U2 - 10.1016/j.vacuum.2023.112408

DO - 10.1016/j.vacuum.2023.112408

M3 - 文章

AN - SCOPUS:85165650874

SN - 0042-207X

VL - 216

JO - Vacuum

JF - Vacuum

M1 - 112408

ER -