Thermal stability of Pt Schottky contacts to 4H-SiC

I. Shalish; C. E.M. De Oliveira; Yoram Shapira; L. Burstein; M. Eizenberg

doi:10.1063/1.1319165

Thermal stability of Pt Schottky contacts to 4H-SiC

I. Shalish^*, C. E.M. De Oliveira, Yoram Shapira, L. Burstein, M. Eizenberg

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

Depth profiles by x-ray photoelectron spectroscopy have been used in conjunction with current-voltage measurements to study the thermal stability of a 50-nm-thick Pt contact to n-4H-SiC substrate. A reaction between the Pt and the SiC substrate is observed at temperatures of 600°C and above. Annealing below that temperature improves the ideality and the uniformity of the Schottky characteristics, while annealing above this temperature degrades the electrical performance and uniformity. Thermodynamic stability is not reached even after annealing for 1 h at 900°C. A local improvement of the characteristics at 800°C is correlated with the formation of a second graphite film in the Pt-SiC reaction.

Original language	English
Pages (from-to)	5724-5728
Number of pages	5
Journal	Journal of Applied Physics
Volume	88
Issue number	10
DOIs	https://doi.org/10.1063/1.1319165
State	Published - 15 Nov 2000
Externally published	Yes

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title = "Thermal stability of Pt Schottky contacts to 4H-SiC",

abstract = "Depth profiles by x-ray photoelectron spectroscopy have been used in conjunction with current-voltage measurements to study the thermal stability of a 50-nm-thick Pt contact to n-4H-SiC substrate. A reaction between the Pt and the SiC substrate is observed at temperatures of 600°C and above. Annealing below that temperature improves the ideality and the uniformity of the Schottky characteristics, while annealing above this temperature degrades the electrical performance and uniformity. Thermodynamic stability is not reached even after annealing for 1 h at 900°C. A local improvement of the characteristics at 800°C is correlated with the formation of a second graphite film in the Pt-SiC reaction.",

author = "I. Shalish and {De Oliveira}, {C. E.M.} and Yoram Shapira and L. Burstein and M. Eizenberg",

year = "2000",

month = nov,

day = "15",

doi = "10.1063/1.1319165",

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T1 - Thermal stability of Pt Schottky contacts to 4H-SiC

AU - Shalish, I.

AU - De Oliveira, C. E.M.

AU - Shapira, Yoram

AU - Burstein, L.

AU - Eizenberg, M.

PY - 2000/11/15

Y1 - 2000/11/15

N2 - Depth profiles by x-ray photoelectron spectroscopy have been used in conjunction with current-voltage measurements to study the thermal stability of a 50-nm-thick Pt contact to n-4H-SiC substrate. A reaction between the Pt and the SiC substrate is observed at temperatures of 600°C and above. Annealing below that temperature improves the ideality and the uniformity of the Schottky characteristics, while annealing above this temperature degrades the electrical performance and uniformity. Thermodynamic stability is not reached even after annealing for 1 h at 900°C. A local improvement of the characteristics at 800°C is correlated with the formation of a second graphite film in the Pt-SiC reaction.

AB - Depth profiles by x-ray photoelectron spectroscopy have been used in conjunction with current-voltage measurements to study the thermal stability of a 50-nm-thick Pt contact to n-4H-SiC substrate. A reaction between the Pt and the SiC substrate is observed at temperatures of 600°C and above. Annealing below that temperature improves the ideality and the uniformity of the Schottky characteristics, while annealing above this temperature degrades the electrical performance and uniformity. Thermodynamic stability is not reached even after annealing for 1 h at 900°C. A local improvement of the characteristics at 800°C is correlated with the formation of a second graphite film in the Pt-SiC reaction.

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DO - 10.1063/1.1319165

M3 - 文章

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SN - 0021-8979

VL - 88

SP - 5724

EP - 5728

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

ER -

Thermal stability of Pt Schottky contacts to 4H-SiC

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