@inproceedings{3fdff8274599419bae732b977ac4086a,
title = "Substrate influence on the behavior of capacitance hysteresis of III-V bilayered MOS stacks",
abstract = "The dependence of ΔVHys on the stressing voltage for High-k Bi-layered InGaAs and InP substrate MOS capacitors is discussed in this work. Using different proportions of Al2O3 and HfO2 dielectrics on a 10 nm thick gate insulator, the influence of each layer and its defects on the variations of the flat-band and hysteresis voltage is studied. Results show that increasing the thickness of the Al2O3 interfacial layer improves the quality of the structure in terms of reducing the hysteresis. InP stacks show the same tendencies of InGaAs stacks, but with a negligible impact of the stress in inversion on the hysteresis.",
keywords = "HfO, InGaAs, InP, bi-layer MOS, hysteresis",
author = "Aguirre, {Fernando L.} and Pazos, {Sebasti{\'a}n M.} and Felix Palumbo and Igor Krylov and Moshe Eizenberg",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 32nd Symposium on Microelectronics Technology and Devices: Chip on the Sands, SBMicro 2017 ; Conference date: 28-08-2017 Through 01-09-2017",
year = "2017",
month = nov,
day = "15",
doi = "10.1109/SBMicro.2017.8112972",
language = "英语",
series = "SBMicro 2017 - 32nd Symposium on Microelectronics Technology and Devices: Chip on the Sands, co-located Symposia: 30th SBCCI - Circuits and Systems Design, 2nd INSCIT - Electronic Instrumentation, 7th WCAS - IC Design Cases and 17th SForum - Undergraduate-Student Forum",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "SBMicro 2017 - 32nd Symposium on Microelectronics Technology and Devices",
address = "United States",
}