TY - JOUR
T1 - Strain relaxation in epitaxial Si1-xGex/Si(100) layers induced by reaction with palladium
AU - Buxbaum, A.
AU - Zolotoyabko, E.
AU - Eizenberg, M.
AU - Schäffler, F.
N1 - Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 1992/12/20
Y1 - 1992/12/20
N2 - In this work we observed strain relaxation at 550 °C following the interaction of palladium with strained Si1-xGex epilayers. The germanium concentrations x in the Si1-xGex films were 0.09 and 0.21 with thicknesses of 3500 Å and 2300 Å respectively, which are below the critical thickness hc. An overlayer of palladium, 1300 Å thick, was deposited onto the Si1-xGex epilayers, and the samples were annealed at 250 and 550 °C in a vacuum furnace for compound formation. Low temperature anneals (250 °C) were characterized by the formation of a uniform, highly textured ternary compound (Pd2Si1-yGey with y < x) on top of the unreacted Si1-xGex layer, and no substantial change in the state of strain was observed in the underlying unreacted Si1-xGex layer. On the contrary, a higher temperature anneal (550 °C) of metallized samples was characterized by the formation of a double-layer structure, with a highly defected germanium-rich Si1-zGez layer (0.37 < z < 0.43) between the ternary compound and the underlying unreacted Si1-xGex. In these samples a considerable decrease in the vertical lattice parameter and correspondingly strain relaxation in the unreacted Si1-xGex layer was observed.
AB - In this work we observed strain relaxation at 550 °C following the interaction of palladium with strained Si1-xGex epilayers. The germanium concentrations x in the Si1-xGex films were 0.09 and 0.21 with thicknesses of 3500 Å and 2300 Å respectively, which are below the critical thickness hc. An overlayer of palladium, 1300 Å thick, was deposited onto the Si1-xGex epilayers, and the samples were annealed at 250 and 550 °C in a vacuum furnace for compound formation. Low temperature anneals (250 °C) were characterized by the formation of a uniform, highly textured ternary compound (Pd2Si1-yGey with y < x) on top of the unreacted Si1-xGex layer, and no substantial change in the state of strain was observed in the underlying unreacted Si1-xGex layer. On the contrary, a higher temperature anneal (550 °C) of metallized samples was characterized by the formation of a double-layer structure, with a highly defected germanium-rich Si1-zGez layer (0.37 < z < 0.43) between the ternary compound and the underlying unreacted Si1-xGex. In these samples a considerable decrease in the vertical lattice parameter and correspondingly strain relaxation in the unreacted Si1-xGex layer was observed.
UR - http://www.scopus.com/inward/record.url?scp=0005021305&partnerID=8YFLogxK
U2 - 10.1016/0040-6090(92)90059-K
DO - 10.1016/0040-6090(92)90059-K
M3 - 文章
AN - SCOPUS:0005021305
VL - 222
SP - 157
EP - 160
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 1-2
ER -