Reactively sputtered titanium carbide thin films: Preparation and properties

M. Eizenberg*, S. P. Murarka

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

The low resistivity and refractory nature of titanium carbide makes it potentially useful as a diffusion barrier in thin film metallization schemes. In the present investigation, deposition and properties of thin titanium carbide films have been investigated. The films were deposited by reactive radio frequency sputtering in methane-argon mixtures on a variety of substrates. The effects of methane to argon ratio, total sputtering pressure, and power on the film deposition rate, composition and properties were determined. There were interactive effects of these parameters on the composition and properties of these films. Resistivity increased with carbon content; for Ti/C≥1 it was ∼200 μΩ cm. Stress that was compressive was maximum in the nearly stoichiometric TiC film. Grain size was small in all films, especially so in carbon rich films. All stoichiometric titanium carbide films were resistant to HF solutions. Films with TiC/≥1 dissolved easily in ethylene dinitrilo tetra acetric acid (EDTA) solution.

Original languageEnglish
Pages (from-to)3190-3194
Number of pages5
JournalJournal of Applied Physics
Volume54
Issue number6
DOIs
StatePublished - 1983
Externally publishedYes

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