TY - JOUR
T1 - Pulsed-dosing controls self-assembly
T2 - 1-Bromopentane on Si(1 1 1)-7 × 7
AU - Eisenstein, Alon
AU - Harikumar, K. R.
AU - Huang, Kai
AU - McNab, Iain R.
AU - Polanyi, John C.
AU - Zabet-Khosousi, Amir
N1 - Funding Information:
We are grateful for financial support from the Natural Sciences and Engineering Research Council of Canada (NSERC), the Xerox Research Centre Canada (XRCC) and the Canadian Institute for Advanced Research (CIfAR). We thank Prof. G. Dujardin and Dr. G. Comtet for their help and advice on the design of the pulsed dose system.
PY - 2012/2/27
Y1 - 2012/2/27
N2 - We have constructed a high-pressure fast-pulse dosing system for use with Scanning Tunneling Microscopy (STM). For 1-bromopentane on Si(1 1 1)-7 × 7 at low temperature (100 K) two physisorbed phases were found to co-exist; spaced-out molecules above corner silicon-adatoms in a one-per-corner-hole (OPCH) pattern, and circles of molecules above middle-adatoms. By tuning the parameters of high-pressure fast-pulse dosing, we can choose which of these two patterns, OPCH or circles, to chemically imprint on room temperature silicon.
AB - We have constructed a high-pressure fast-pulse dosing system for use with Scanning Tunneling Microscopy (STM). For 1-bromopentane on Si(1 1 1)-7 × 7 at low temperature (100 K) two physisorbed phases were found to co-exist; spaced-out molecules above corner silicon-adatoms in a one-per-corner-hole (OPCH) pattern, and circles of molecules above middle-adatoms. By tuning the parameters of high-pressure fast-pulse dosing, we can choose which of these two patterns, OPCH or circles, to chemically imprint on room temperature silicon.
UR - http://www.scopus.com/inward/record.url?scp=84857232159&partnerID=8YFLogxK
U2 - 10.1016/j.cplett.2011.12.052
DO - 10.1016/j.cplett.2011.12.052
M3 - 文章
AN - SCOPUS:84857232159
SN - 0009-2614
VL - 527
SP - 1
EP - 6
JO - Chemical Physics Letters
JF - Chemical Physics Letters
ER -