Fast interfacial oxidation of amorphous Si1−xGex:H by SnO2

F. Edelman; R. Brener; C. Cytermann; M. Eizenberg; R. Weil; W. Beyer

doi:10.1063/1.114638

Fast interfacial oxidation of amorphous Si_1−xGe_x:H by SnO₂

F. Edelman, R. Brener, C. Cytermann, M. Eizenberg, R. Weil, W. Beyer

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Fast oxidation of amorphous (a) Si_1−xGe_x:H by interfacial reaction with SnO₂ was observed at the temperature range of 400–500 °C. The rate of interfacial oxidation was very significant, while a test in a dry O₂ ambient at the same temperatures showed no oxidation of Si_1−xGe_x:H beyond the native oxide. The interfacial reaction of the SiGe:H/SnO₂/glass system resulted in a layered structure of silicon oxide, tin oxide, and β-Sn at the SiGe/SnO₂ interface. The extent of the interfacial reaction was found to depend on the Ge content in the Si_1−xGe_x:H films; after annealing, the resultant silicon oxide layer is thicker for the Si-rich SiGe layer than for the Ge-rich composition. On the other hand, the SnO₂ layer was totally reduced by an a-Ge:H top layer after a 1 h, 500 °C annealing procedure.

Original language	English
Pages (from-to)	389-391
Number of pages	3
Journal	Applied Physics Letters
Volume	67
Issue number	3
DOIs	https://doi.org/10.1063/1.114638
State	Published - 17 Jul 1995
Externally published	Yes

Keywords

AMORPHOUS STATE
ANNEALING
GERMANIUM ALLOYS
HETEROSTRUCTURES
HYDROGEN ADDITIONS
INTERFACE STRUCTURE
MULTILAYERS
OXIDATION
SILICON ALLOYS
THERMAL INSTABILITIES
TIN OXIDES

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@article{becbd9ab91e64aefae34a2b065e8980b,

title = "Fast interfacial oxidation of amorphous Si1−xGex:H by SnO2",

abstract = "Fast oxidation of amorphous (a) Si1−xGex:H by interfacial reaction with SnO2 was observed at the temperature range of 400–500 °C. The rate of interfacial oxidation was very significant, while a test in a dry O2 ambient at the same temperatures showed no oxidation of Si1−xGex:H beyond the native oxide. The interfacial reaction of the SiGe:H/SnO2/glass system resulted in a layered structure of silicon oxide, tin oxide, and β-Sn at the SiGe/SnO2 interface. The extent of the interfacial reaction was found to depend on the Ge content in the Si1−xGex:H films; after annealing, the resultant silicon oxide layer is thicker for the Si-rich SiGe layer than for the Ge-rich composition. On the other hand, the SnO2 layer was totally reduced by an a-Ge:H top layer after a 1 h, 500 °C annealing procedure.",

keywords = "AMORPHOUS STATE, ANNEALING, GERMANIUM ALLOYS, HETEROSTRUCTURES, HYDROGEN ADDITIONS, INTERFACE STRUCTURE, MULTILAYERS, OXIDATION, SILICON ALLOYS, THERMAL INSTABILITIES, TIN OXIDES",

author = "F. Edelman and R. Brener and C. Cytermann and M. Eizenberg and R. Weil and W. Beyer",

year = "1995",

month = jul,

day = "17",

doi = "10.1063/1.114638",

language = "英语",

volume = "67",

pages = "389--391",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - Fast interfacial oxidation of amorphous Si1−xGex:H by SnO2

AU - Edelman, F.

AU - Brener, R.

AU - Cytermann, C.

AU - Eizenberg, M.

AU - Weil, R.

AU - Beyer, W.

PY - 1995/7/17

Y1 - 1995/7/17

N2 - Fast oxidation of amorphous (a) Si1−xGex:H by interfacial reaction with SnO2 was observed at the temperature range of 400–500 °C. The rate of interfacial oxidation was very significant, while a test in a dry O2 ambient at the same temperatures showed no oxidation of Si1−xGex:H beyond the native oxide. The interfacial reaction of the SiGe:H/SnO2/glass system resulted in a layered structure of silicon oxide, tin oxide, and β-Sn at the SiGe/SnO2 interface. The extent of the interfacial reaction was found to depend on the Ge content in the Si1−xGex:H films; after annealing, the resultant silicon oxide layer is thicker for the Si-rich SiGe layer than for the Ge-rich composition. On the other hand, the SnO2 layer was totally reduced by an a-Ge:H top layer after a 1 h, 500 °C annealing procedure.

AB - Fast oxidation of amorphous (a) Si1−xGex:H by interfacial reaction with SnO2 was observed at the temperature range of 400–500 °C. The rate of interfacial oxidation was very significant, while a test in a dry O2 ambient at the same temperatures showed no oxidation of Si1−xGex:H beyond the native oxide. The interfacial reaction of the SiGe:H/SnO2/glass system resulted in a layered structure of silicon oxide, tin oxide, and β-Sn at the SiGe/SnO2 interface. The extent of the interfacial reaction was found to depend on the Ge content in the Si1−xGex:H films; after annealing, the resultant silicon oxide layer is thicker for the Si-rich SiGe layer than for the Ge-rich composition. On the other hand, the SnO2 layer was totally reduced by an a-Ge:H top layer after a 1 h, 500 °C annealing procedure.

KW - AMORPHOUS STATE

KW - ANNEALING

KW - GERMANIUM ALLOYS

KW - HETEROSTRUCTURES

KW - HYDROGEN ADDITIONS

KW - INTERFACE STRUCTURE

KW - MULTILAYERS

KW - OXIDATION

KW - SILICON ALLOYS

KW - THERMAL INSTABILITIES

KW - TIN OXIDES

UR - http://www.scopus.com/inward/record.url?scp=36449003811&partnerID=8YFLogxK

U2 - 10.1063/1.114638

DO - 10.1063/1.114638

M3 - 文章

AN - SCOPUS:36449003811

SN - 0003-6951

VL - 67

SP - 389

EP - 391

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

ER -

Fast interfacial oxidation of amorphous Si_1−xGe_x:H by SnO₂

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Keywords

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