Fast interfacial oxidation of amorphous Si1−xGex:H by SnO2

F. Edelman, R. Brener, C. Cytermann, M. Eizenberg, R. Weil, W. Beyer

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Abstract

Fast oxidation of amorphous (a) Si1−xGex:H by interfacial reaction with SnO2 was observed at the temperature range of 400–500 °C. The rate of interfacial oxidation was very significant, while a test in a dry O2 ambient at the same temperatures showed no oxidation of Si1−xGex:H beyond the native oxide. The interfacial reaction of the SiGe:H/SnO2/glass system resulted in a layered structure of silicon oxide, tin oxide, and β-Sn at the SiGe/SnO2 interface. The extent of the interfacial reaction was found to depend on the Ge content in the Si1−xGex:H films; after annealing, the resultant silicon oxide layer is thicker for the Si-rich SiGe layer than for the Ge-rich composition. On the other hand, the SnO2 layer was totally reduced by an a-Ge:H top layer after a 1 h, 500 °C annealing procedure.

Original languageEnglish
Pages (from-to)389-391
Number of pages3
JournalApplied Physics Letters
Volume67
Issue number3
DOIs
StatePublished - 17 Jul 1995
Externally publishedYes

Keywords

  • AMORPHOUS STATE
  • ANNEALING
  • GERMANIUM ALLOYS
  • HETEROSTRUCTURES
  • HYDROGEN ADDITIONS
  • INTERFACE STRUCTURE
  • MULTILAYERS
  • OXIDATION
  • SILICON ALLOYS
  • THERMAL INSTABILITIES
  • TIN OXIDES

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