Energy band discontinuities in heterojunctions measured by internal photoemission

M. Heiblum*, M. I. Nathan, M. Eizenberg

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

42 Scopus citations

Abstract

A novel method involving internal photoemission has been developed to determine the conduction band discontinuity Δ Ec of heterojunctions. The method is straightforward, accurate, and assumes minimum unknowns; and has been applied to GaAs/AlxGa1-xAs heterojunctions. We have found for x<0.4 that Δ Ec≅0.62 Δ Eg, where Δ Eg is the band-gap difference. For x>0.4, the apparent Δ Ec is considerably smaller.

Original languageEnglish
Pages (from-to)503-505
Number of pages3
JournalApplied Physics Letters
Volume47
Issue number5
DOIs
StatePublished - 1985
Externally publishedYes

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