TiO2-based photoanodes are very well known for their photoresponse performance, however, their inability to work in the visible range is still a challenge. To tackle this issue, Al-doped or Sn-coupled Ti3SiC2 (Al-TSC or Sn-TSC) is fabricated via a hot-press sintering technique, and the anodized Al-TSC or Sn-TSC is abbreviated as Al-ATSC or Sn-ATSC. The Al-ATSC or Sn-ATSC with optimized doping content of Al or Sn corresponding to a superior photocurrent of 137.24 μA cm−2 or 126.76 μA cm−2 which is 18 or 16 times higher than that of the anodized Ti3SiC2 (ATSC) (7.6 μA cm−2) respectively. The capacitance for Al-ATSC or Sn-ATSC samples can be improved in the presence of visible light illumination. Enhanced photoelectrochemical (PEC) mechanism for Al-ATSC is that generated defects in Al doped TiO2 (Al-TiO2) improve the visible light absorption capacity, for Sn-ATSC is the suppressed recombination of hole-electron pairs by the coupling effect of SnO2/TiO2.
- Al doping
- SnO coupling