Co silicide formation on epitaxial Si1-yCy/Si (001) layers

Y. Roichman, A. Berner, R. Brener, C. Cytermann, D. Shilo, E. Zolotoyabko, M. Eizenberg*, H. J. Osten

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

We investigated the formation and structure of cobalt suicide (CoSi2) on Si1-yCy. (0≤y ≤0.81%) layers grown by molecular beam epitaxy on Si (001). The incorporation of C in the Si lattice causes the following phenomena during silicidation: (i) the formation of CoSi2 is delayed in temperature scale, as compared to pure Si; (ii) epitaxial CoSi2 grains are formed at T≥600 °C; (iii) a two sublayer structure of CoSi2 is observed, where the upper sublayer contains a very small amount of C and has a homogeneous microstructure, while the lower sublayer, which has a higher C concentration, contains randomly oriented CoSi2 nanocrystallites; (iv) spatial inhomogeneity results in significant variation (within ±40%) in the CoSi2 layer thickness; (v) no strain relaxation in the Si1-yCy layer during silicidation is detected up to 700 °C; and (vi) the distribution of carbon and boron in the semiconductor during silicidation is not changed significantly. The two latter findings show the potential of CoSi2 on Si1-yCy for device application despite the mentioned inhomogeneity in CoSi2 microstructure.

Original languageEnglish
Pages (from-to)3306-3312
Number of pages7
JournalJournal of Applied Physics
Volume87
Issue number7
DOIs
StatePublished - 1 Jan 2000
Externally publishedYes

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