Chemical Vapor deposition (CVD) TiN: a barrier metallization for submicron via and contact applications

Karl A. Littau*, R. Mosely, M. Eizenberg, H. Tran, Ashok K. Sinha, Girish A. Dixit, Manoj K. Jain, Michael F. Chisholm, R. H. Havemann

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

A new technique for low temperature CVD TiN is introduced as a barrier/glue layer for sub 0.5 micron applications. Excellent conformity (> 70%) is achieved while maintaining good electrical performance and reliability. The films are shown to be polycrystalline TiN with no preferred grain orientation. In addition compositional analysis shows significant amounts of carbon in the film presumably between the grains. The electrical properties of the CVD film were evaluated at the via and contact level. The contact and via resistances of tungsten plugs using CVD TiN glue layers are shown to be comparable to plugs using sputtered TiN. The barrier performance of the film was also evaluated at the contact level. The superior junction leakage data indicate that the CVD TiN film should have wide application as a barrier metal for sub 0.5 mm applications.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsFusen E. Chen, Shyam P. Murarka
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages189-202
Number of pages14
ISBN (Print)0819416681
StatePublished - 1994
Externally publishedYes
EventMicroelectronics Technology and Process Integration - Austin, TX, USA
Duration: 20 Oct 199421 Oct 1994

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume2335
ISSN (Print)0277-786X

Conference

ConferenceMicroelectronics Technology and Process Integration
CityAustin, TX, USA
Period20/10/9421/10/94

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