TiSiN films produced by chemical vapor deposition as diffusion barriers for Cu metallization

S. Joseph; M. Eizenberg; C. Marcadal; L. Chen

doi:10.1116/1.1494068

TiSiN films produced by chemical vapor deposition as diffusion barriers for Cu metallization

S. Joseph^*, M. Eizenberg, C. Marcadal, L. Chen

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

13 Scopus citations

Abstract

TiN films were produced by MOCVD of TDMAT followed by H₂/N₂ plasma treatment and a flash of SiH₄. Good properties were observed when interposed between copper and silicon. A small improvement in the barriers integrity was achieved after the SiH₄ flash due to the formation of Si₃N₄.

Original language	English
Pages (from-to)	1471-1475
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	4
DOIs	https://doi.org/10.1116/1.1494068
State	Published - Jul 2002
Externally published	Yes
Event	Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces - Santa Fe, NM, United States Duration: 6 Jan 2002 → 10 Jan 2002

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title = "TiSiN films produced by chemical vapor deposition as diffusion barriers for Cu metallization",

abstract = "TiN films were produced by MOCVD of TDMAT followed by H2/N2 plasma treatment and a flash of SiH4. Good properties were observed when interposed between copper and silicon. A small improvement in the barriers integrity was achieved after the SiH4 flash due to the formation of Si3N4.",

author = "S. Joseph and M. Eizenberg and C. Marcadal and L. Chen",

year = "2002",

month = jul,

doi = "10.1116/1.1494068",

language = "英语",

volume = "20",

pages = "1471--1475",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "4",

note = "Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces ; Conference date: 06-01-2002 Through 10-01-2002",

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TY - JOUR

T1 - TiSiN films produced by chemical vapor deposition as diffusion barriers for Cu metallization

AU - Joseph, S.

AU - Eizenberg, M.

AU - Marcadal, C.

AU - Chen, L.

PY - 2002/7

Y1 - 2002/7

N2 - TiN films were produced by MOCVD of TDMAT followed by H2/N2 plasma treatment and a flash of SiH4. Good properties were observed when interposed between copper and silicon. A small improvement in the barriers integrity was achieved after the SiH4 flash due to the formation of Si3N4.

AB - TiN films were produced by MOCVD of TDMAT followed by H2/N2 plasma treatment and a flash of SiH4. Good properties were observed when interposed between copper and silicon. A small improvement in the barriers integrity was achieved after the SiH4 flash due to the formation of Si3N4.

UR - http://www.scopus.com/inward/record.url?scp=0035982569&partnerID=8YFLogxK

U2 - 10.1116/1.1494068

DO - 10.1116/1.1494068

M3 - 会议文章

AN - SCOPUS:0035982569

SN - 1071-1023

VL - 20

SP - 1471

EP - 1475

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

T2 - Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces

Y2 - 6 January 2002 through 10 January 2002

ER -

TiSiN films produced by chemical vapor deposition as diffusion barriers for Cu metallization

Abstract

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