Abstract
High-quality chemical vapor deposited TiCN films were produced in a single wafer reactor using a metallorganic (TDMAT) precursor. The films have excellent step coverage over high aspect-ratio contacts as well as very low particle content. These properties are obtained because the films are deposited under surface-reaction controlled conditions. The films show also excellent barrier properties against Al and WF6 attack. These properties make this material a superb contact barrier material for ultra-large-scale integrated devices.
Original language | English |
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Pages (from-to) | 2416-2418 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 65 |
Issue number | 19 |
DOIs | |
State | Published - 1994 |
Externally published | Yes |