Structural disorder in SiGe films grown epitaxially on Si by ion beam sputter deposition

D. Parnis; E. Zolotoyabko; W. D. Kaplan; M. Eizenberg; N. Mosleh; F. Meyer; C. Schwebel

doi:10.1016/S0040-6090(96)09218-8

Structural disorder in SiGe films grown epitaxially on Si by ion beam sputter deposition

D. Parnis^*, E. Zolotoyabko, W. D. Kaplan, M. Eizenberg, N. Mosleh, F. Meyer, C. Schwebel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

SiGe/Si heterostructures grown by ion beam sputter deposition were characterized by high-resolution X-ray diffraction and transmission electron microscopy. Agglomerates of point defects, formed under ion bombardment during growth, were observed in electron microscopy images. These specific defects resulted in structural disorder which could be described in terms of local fluctuations of interplanar distances. The averaged magnitudes of the fluctuations were derived from X-ray diffraction spectra using a novel simulation procedure based on the direct summation of scattered waves in imperfect heterostructures. This approach allowed us to characterize quantitatively the degree of the structural disorder, and to follow defect transformations as a function of growth and annealing temperatures.

Original language	English
Pages (from-to)	64-68
Number of pages	5
Journal	Thin Solid Films
Volume	294
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(96)09218-8
State	Published - 15 Feb 1997
Externally published	Yes

Keywords

Germanium
Silicon
Structural disorder

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10.1016/S0040-6090(96)09218-8

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title = "Structural disorder in SiGe films grown epitaxially on Si by ion beam sputter deposition",

abstract = "SiGe/Si heterostructures grown by ion beam sputter deposition were characterized by high-resolution X-ray diffraction and transmission electron microscopy. Agglomerates of point defects, formed under ion bombardment during growth, were observed in electron microscopy images. These specific defects resulted in structural disorder which could be described in terms of local fluctuations of interplanar distances. The averaged magnitudes of the fluctuations were derived from X-ray diffraction spectra using a novel simulation procedure based on the direct summation of scattered waves in imperfect heterostructures. This approach allowed us to characterize quantitatively the degree of the structural disorder, and to follow defect transformations as a function of growth and annealing temperatures.",

keywords = "Germanium, Silicon, Structural disorder",

author = "D. Parnis and E. Zolotoyabko and Kaplan, {W. D.} and M. Eizenberg and N. Mosleh and F. Meyer and C. Schwebel",

year = "1997",

month = feb,

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doi = "10.1016/S0040-6090(96)09218-8",

language = "英语",

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TY - JOUR

T1 - Structural disorder in SiGe films grown epitaxially on Si by ion beam sputter deposition

AU - Parnis, D.

AU - Zolotoyabko, E.

AU - Kaplan, W. D.

AU - Eizenberg, M.

AU - Mosleh, N.

AU - Meyer, F.

AU - Schwebel, C.

PY - 1997/2/15

Y1 - 1997/2/15

N2 - SiGe/Si heterostructures grown by ion beam sputter deposition were characterized by high-resolution X-ray diffraction and transmission electron microscopy. Agglomerates of point defects, formed under ion bombardment during growth, were observed in electron microscopy images. These specific defects resulted in structural disorder which could be described in terms of local fluctuations of interplanar distances. The averaged magnitudes of the fluctuations were derived from X-ray diffraction spectra using a novel simulation procedure based on the direct summation of scattered waves in imperfect heterostructures. This approach allowed us to characterize quantitatively the degree of the structural disorder, and to follow defect transformations as a function of growth and annealing temperatures.

AB - SiGe/Si heterostructures grown by ion beam sputter deposition were characterized by high-resolution X-ray diffraction and transmission electron microscopy. Agglomerates of point defects, formed under ion bombardment during growth, were observed in electron microscopy images. These specific defects resulted in structural disorder which could be described in terms of local fluctuations of interplanar distances. The averaged magnitudes of the fluctuations were derived from X-ray diffraction spectra using a novel simulation procedure based on the direct summation of scattered waves in imperfect heterostructures. This approach allowed us to characterize quantitatively the degree of the structural disorder, and to follow defect transformations as a function of growth and annealing temperatures.

KW - Germanium

KW - Silicon

KW - Structural disorder

UR - http://www.scopus.com/inward/record.url?scp=0031074632&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(96)09218-8

DO - 10.1016/S0040-6090(96)09218-8

M3 - 文章

AN - SCOPUS:0031074632

SN - 0040-6090

VL - 294

SP - 64

EP - 68

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Structural disorder in SiGe films grown epitaxially on Si by ion beam sputter deposition

Abstract

Keywords

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