Sequential silicide formation between vanadium and amorphous silicon thin-film bilayers

TY - JOUR

T1 - Sequential silicide formation between vanadium and amorphous silicon thin-film bilayers

AU - Psaras, P. A.

AU - Eizenberg, M.

AU - Tu, K. N.

PY - 1984

Y1 - 1984

N2 - Solid-state reactions between bilayer thin films of vanadium and amorphous silicon with an excess amount of vanadium have been studied by Rutherford backscattering spectroscopy and Seemann-Bohlin x-ray diffraction. In prior studies of the interaction between vanadium thin films and single-crystal silicon, VSi2 has been the only compound observed. In the present study a sequence of compounds was observed. The first silicide, VSi2, was observed to form at 475 °C. At higher temperatures the compounds V 5Si3 and V3Si formed in sequence. The growth of VSi2 is linear in time with an activation energy of 2.3±0.4 eV. The growth of V5Si3 is also linear with an activation energy of 2.5±0.1 eV.

AB - Solid-state reactions between bilayer thin films of vanadium and amorphous silicon with an excess amount of vanadium have been studied by Rutherford backscattering spectroscopy and Seemann-Bohlin x-ray diffraction. In prior studies of the interaction between vanadium thin films and single-crystal silicon, VSi2 has been the only compound observed. In the present study a sequence of compounds was observed. The first silicide, VSi2, was observed to form at 475 °C. At higher temperatures the compounds V 5Si3 and V3Si formed in sequence. The growth of VSi2 is linear in time with an activation energy of 2.3±0.4 eV. The growth of V5Si3 is also linear with an activation energy of 2.5±0.1 eV.

UR - http://www.scopus.com/inward/record.url?scp=2242428623&partnerID=8YFLogxK

U2 - 10.1063/1.333910

DO - 10.1063/1.333910

M3 - 文章

AN - SCOPUS:2242428623

SN - 0021-8979

VL - 56

SP - 3439

EP - 3444

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

ER -