Quantitative analysis of Ti-Si-Ge/Si-Ge/Si structures by EDS and AES

Alexander I. Berner; Michael Y. Beregovsky; Moshe M. Eizenberg

doi:10.1007/s006040050095

Quantitative analysis of Ti-Si-Ge/Si-Ge/Si structures by EDS and AES

Alexander I. Berner^*, Michael Y. Beregovsky, Moshe M. Eizenberg

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

A method for quantitative analysis of Ti-Si-Ge/Si-Ge/Si structures with submicron thick layers by energy dispersive spectroscopy (EDS) in transmission electron microscopy (TEM) and Auger electron spectroscopy (AES) was developed. Quantitation of the results of both AES and EDS techniques was performed on the basis of a single reference specimen for the Ti-Si-Ge system comprising a uniform layer of the Ti(Si_0.85Ge_0.15)₂ phase on a silicon substrate. The reference sample was prepared by the same procedure as the samples used in the study, and was thoroughly characterized by X-ray diffractometry, transmission electron microscopy and energy dispersive spectroscopy in scanning electron microscopy. Using this reference sample the elemental sensitivity factors relative to Si were found for both techniques, which enable us to obtain the elemental depth distributions for the studied samples. Good agreement between the results obtained by EDS/TEM, AES and supplementary techniques was found.

Original language	English
Pages (from-to)	461-465
Number of pages	5
Journal	Mikrochimica Acta
Volume	132
Issue number	2-4
DOIs	https://doi.org/10.1007/s006040050095
State	Published - 2000
Externally published	Yes

Keywords

AES
EDS
Silicon-germanium layers
TEM
Titanium

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10.1007/s006040050095

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@article{b0c53218866e458c8aa2239f299dc028,

title = "Quantitative analysis of Ti-Si-Ge/Si-Ge/Si structures by EDS and AES",

abstract = "A method for quantitative analysis of Ti-Si-Ge/Si-Ge/Si structures with submicron thick layers by energy dispersive spectroscopy (EDS) in transmission electron microscopy (TEM) and Auger electron spectroscopy (AES) was developed. Quantitation of the results of both AES and EDS techniques was performed on the basis of a single reference specimen for the Ti-Si-Ge system comprising a uniform layer of the Ti(Si0.85Ge0.15)2 phase on a silicon substrate. The reference sample was prepared by the same procedure as the samples used in the study, and was thoroughly characterized by X-ray diffractometry, transmission electron microscopy and energy dispersive spectroscopy in scanning electron microscopy. Using this reference sample the elemental sensitivity factors relative to Si were found for both techniques, which enable us to obtain the elemental depth distributions for the studied samples. Good agreement between the results obtained by EDS/TEM, AES and supplementary techniques was found.",

keywords = "AES, EDS, Silicon-germanium layers, TEM, Titanium",

author = "Berner, {Alexander I.} and Beregovsky, {Michael Y.} and Eizenberg, {Moshe M.}",

year = "2000",

doi = "10.1007/s006040050095",

language = "英语",

volume = "132",

pages = "461--465",

journal = "Mikrochimica Acta",

issn = "0026-3672",

publisher = "Springer-Verlag Wien",

number = "2-4",

}

TY - JOUR

T1 - Quantitative analysis of Ti-Si-Ge/Si-Ge/Si structures by EDS and AES

AU - Berner, Alexander I.

AU - Beregovsky, Michael Y.

AU - Eizenberg, Moshe M.

PY - 2000

Y1 - 2000

N2 - A method for quantitative analysis of Ti-Si-Ge/Si-Ge/Si structures with submicron thick layers by energy dispersive spectroscopy (EDS) in transmission electron microscopy (TEM) and Auger electron spectroscopy (AES) was developed. Quantitation of the results of both AES and EDS techniques was performed on the basis of a single reference specimen for the Ti-Si-Ge system comprising a uniform layer of the Ti(Si0.85Ge0.15)2 phase on a silicon substrate. The reference sample was prepared by the same procedure as the samples used in the study, and was thoroughly characterized by X-ray diffractometry, transmission electron microscopy and energy dispersive spectroscopy in scanning electron microscopy. Using this reference sample the elemental sensitivity factors relative to Si were found for both techniques, which enable us to obtain the elemental depth distributions for the studied samples. Good agreement between the results obtained by EDS/TEM, AES and supplementary techniques was found.

AB - A method for quantitative analysis of Ti-Si-Ge/Si-Ge/Si structures with submicron thick layers by energy dispersive spectroscopy (EDS) in transmission electron microscopy (TEM) and Auger electron spectroscopy (AES) was developed. Quantitation of the results of both AES and EDS techniques was performed on the basis of a single reference specimen for the Ti-Si-Ge system comprising a uniform layer of the Ti(Si0.85Ge0.15)2 phase on a silicon substrate. The reference sample was prepared by the same procedure as the samples used in the study, and was thoroughly characterized by X-ray diffractometry, transmission electron microscopy and energy dispersive spectroscopy in scanning electron microscopy. Using this reference sample the elemental sensitivity factors relative to Si were found for both techniques, which enable us to obtain the elemental depth distributions for the studied samples. Good agreement between the results obtained by EDS/TEM, AES and supplementary techniques was found.

KW - AES

KW - EDS

KW - Silicon-germanium layers

KW - TEM

KW - Titanium

UR - http://www.scopus.com/inward/record.url?scp=24944530474&partnerID=8YFLogxK

U2 - 10.1007/s006040050095

DO - 10.1007/s006040050095

M3 - 文章

AN - SCOPUS:24944530474

SN - 0026-3672

VL - 132

SP - 461

EP - 465

JO - Mikrochimica Acta

JF - Mikrochimica Acta

IS - 2-4

ER -

Quantitative analysis of Ti-Si-Ge/Si-Ge/Si structures by EDS and AES

Abstract

Keywords

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