Optical valleytronics of impurity states in two-dimensional Dirac materials

TY - JOUR

T1 - Optical valleytronics of impurity states in two-dimensional Dirac materials

AU - Ko, Dogyun

AU - Morozov, A. V.

AU - Kovalev, V. M.

AU - Savenko, I. G.

N1 - Publisher Copyright: © 2021 American Physical Society.

PY - 2021/4/9

Y1 - 2021/4/9

N2 - We analyze the valley selection rules for optical transitions from impurity states to the conduction band in two-dimensional Dirac materials, taking a monolayer of MoS2 as an example. We employ the analytical model of a shallow impurity potential which localizes electrons described by a spinor wave function, and, first, find the system eigenstates taking into account the presence of two valleys in the Brillouin zone. Then, we find the spectrum of the absorbance and calculate the photon-drag electric current due to the impurity-band transitions, drawing the general conclusions regarding the valley optical selection rules for the impurity-band optical transitions in gapped Dirac materials.

AB - We analyze the valley selection rules for optical transitions from impurity states to the conduction band in two-dimensional Dirac materials, taking a monolayer of MoS2 as an example. We employ the analytical model of a shallow impurity potential which localizes electrons described by a spinor wave function, and, first, find the system eigenstates taking into account the presence of two valleys in the Brillouin zone. Then, we find the spectrum of the absorbance and calculate the photon-drag electric current due to the impurity-band transitions, drawing the general conclusions regarding the valley optical selection rules for the impurity-band optical transitions in gapped Dirac materials.

UR - http://www.scopus.com/inward/record.url?scp=85104459488&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.103.L161301

DO - 10.1103/PhysRevB.103.L161301

M3 - 文章

AN - SCOPUS:85104459488

SN - 2469-9950

VL - 103

JO - Physical Review B

JF - Physical Review B

IS - 16

M1 - L161301

ER -