Multiphoton photocurrent in wide bandgap semiconductors for nonlinear optoelectronics: Comparison of GaP, GaN/InGaN, and SiC

Chuanliang Wang; Ahsan Ali; Khadga Jung Karki

doi:10.1063/5.0185815

Multiphoton photocurrent in wide bandgap semiconductors for nonlinear optoelectronics: Comparison of GaP, GaN/InGaN, and SiC

Chuanliang Wang, Ahsan Ali, Khadga Jung Karki^*

^*Corresponding author for this work

Physics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Wide bandgap semiconductors are ideally suited for nonlinear optoelectronics. Because their bandgaps are larger than 2 eV, simultaneous absorption of two or more near-infrared photons is necessary to excite the electrons from the valence to the conduction band. Understanding of the processes that affect multiphoton absorption is important in the design and fabrication of optoelectronic devices. Here, we present an overview of the photocurrent response in photodetectors made from GaP, GaN, InGaN, and SiC when they are excited by photons at 1.2 eV. Recent measurements have shown that sub-bandgap absorptions contribute to photocurrent in GaP, and, thus, it is not a good material for nonlinear optoelectronics. Similarly, the response of GaN is affected by long-lived trapped charges. Photocurrents in InGaN and SiC are predominantly from three- and four-photon absorption, respectively. Moreover, these materials can withstand excitation intensities higher than 10¹¹ W cm⁻², making them appropriate platforms for nonlinear optoelectronics.

Original language	English
Article number	062101
Journal	Applied Physics Letters
Volume	124
Issue number	6
DOIs	https://doi.org/10.1063/5.0185815
State	Published - 5 Feb 2024

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abstract = "Wide bandgap semiconductors are ideally suited for nonlinear optoelectronics. Because their bandgaps are larger than 2 eV, simultaneous absorption of two or more near-infrared photons is necessary to excite the electrons from the valence to the conduction band. Understanding of the processes that affect multiphoton absorption is important in the design and fabrication of optoelectronic devices. Here, we present an overview of the photocurrent response in photodetectors made from GaP, GaN, InGaN, and SiC when they are excited by photons at 1.2 eV. Recent measurements have shown that sub-bandgap absorptions contribute to photocurrent in GaP, and, thus, it is not a good material for nonlinear optoelectronics. Similarly, the response of GaN is affected by long-lived trapped charges. Photocurrents in InGaN and SiC are predominantly from three- and four-photon absorption, respectively. Moreover, these materials can withstand excitation intensities higher than 1011 W cm−2, making them appropriate platforms for nonlinear optoelectronics.",

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AB - Wide bandgap semiconductors are ideally suited for nonlinear optoelectronics. Because their bandgaps are larger than 2 eV, simultaneous absorption of two or more near-infrared photons is necessary to excite the electrons from the valence to the conduction band. Understanding of the processes that affect multiphoton absorption is important in the design and fabrication of optoelectronic devices. Here, we present an overview of the photocurrent response in photodetectors made from GaP, GaN, InGaN, and SiC when they are excited by photons at 1.2 eV. Recent measurements have shown that sub-bandgap absorptions contribute to photocurrent in GaP, and, thus, it is not a good material for nonlinear optoelectronics. Similarly, the response of GaN is affected by long-lived trapped charges. Photocurrents in InGaN and SiC are predominantly from three- and four-photon absorption, respectively. Moreover, these materials can withstand excitation intensities higher than 1011 W cm−2, making them appropriate platforms for nonlinear optoelectronics.

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Multiphoton photocurrent in wide bandgap semiconductors for nonlinear optoelectronics: Comparison of GaP, GaN/InGaN, and SiC

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