Indium out-diffusion in Al2O3/InGaAs stacks during anneal at different ambient conditions

Igor Krylov; Roy Winter; Dan Ritter; Moshe Eizenberg

doi:10.1063/1.4882645

Indium out-diffusion in Al₂O₃/InGaAs stacks during anneal at different ambient conditions

Igor Krylov, Roy Winter, Dan Ritter, Moshe Eizenberg

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

Indium out-diffusion during anneal enhances leakage currents in metal/dielectric/InGaAs gate stacks. In this work, we study the influence of ambient conditions during anneal on indium out-diffusion in Al₂O ₃/InGaAs structures, prior to the gate metal deposition. Using X-ray photoemission spectroscopy and time of flight secondary ions mass spectrometry, we observed much lower indium concentrations in the Al₂O₃ layer following vacuum and O₂ anneals compared to forming gas or nitrogen anneals. The electrical characteristics of the Ni/Al₂O ₃/InGaAs gate stack following these pre-metallization anneals as well as after subsequent post metallization anneals are presented. Possible explanations for the role of the annealing ambient conditions on indium out-diffusion are presented.

Original language	English
Article number	243504
Journal	Applied Physics Letters
Volume	104
Issue number	24
DOIs	https://doi.org/10.1063/1.4882645
State	Published - 16 Jun 2014
Externally published	Yes

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abstract = "Indium out-diffusion during anneal enhances leakage currents in metal/dielectric/InGaAs gate stacks. In this work, we study the influence of ambient conditions during anneal on indium out-diffusion in Al2O 3/InGaAs structures, prior to the gate metal deposition. Using X-ray photoemission spectroscopy and time of flight secondary ions mass spectrometry, we observed much lower indium concentrations in the Al2O3 layer following vacuum and O2 anneals compared to forming gas or nitrogen anneals. The electrical characteristics of the Ni/Al2O 3/InGaAs gate stack following these pre-metallization anneals as well as after subsequent post metallization anneals are presented. Possible explanations for the role of the annealing ambient conditions on indium out-diffusion are presented.",

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AU - Krylov, Igor

AU - Winter, Roy

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AU - Eizenberg, Moshe

PY - 2014/6/16

Y1 - 2014/6/16

N2 - Indium out-diffusion during anneal enhances leakage currents in metal/dielectric/InGaAs gate stacks. In this work, we study the influence of ambient conditions during anneal on indium out-diffusion in Al2O 3/InGaAs structures, prior to the gate metal deposition. Using X-ray photoemission spectroscopy and time of flight secondary ions mass spectrometry, we observed much lower indium concentrations in the Al2O3 layer following vacuum and O2 anneals compared to forming gas or nitrogen anneals. The electrical characteristics of the Ni/Al2O 3/InGaAs gate stack following these pre-metallization anneals as well as after subsequent post metallization anneals are presented. Possible explanations for the role of the annealing ambient conditions on indium out-diffusion are presented.

AB - Indium out-diffusion during anneal enhances leakage currents in metal/dielectric/InGaAs gate stacks. In this work, we study the influence of ambient conditions during anneal on indium out-diffusion in Al2O 3/InGaAs structures, prior to the gate metal deposition. Using X-ray photoemission spectroscopy and time of flight secondary ions mass spectrometry, we observed much lower indium concentrations in the Al2O3 layer following vacuum and O2 anneals compared to forming gas or nitrogen anneals. The electrical characteristics of the Ni/Al2O 3/InGaAs gate stack following these pre-metallization anneals as well as after subsequent post metallization anneals are presented. Possible explanations for the role of the annealing ambient conditions on indium out-diffusion are presented.

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Indium out-diffusion in Al₂O₃/InGaAs stacks during anneal at different ambient conditions

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