@inproceedings{e0c30c17119340d3ad2c6bc007930ee2,
title = "General features of progressive breakdown in gate oxides: A compact model",
abstract = "We show and discuss some general features of dielectric breakdown of ultra-thin gate oxides for CMOS. We discuss III-V devices with high-k/metal gate, and compare to more classical structures with silicon substrates, SiOxNy or high-k as gate dielectrics, and poly-Si or metal gate. A model of the breakdown growth dependence on voltage, temperature, oxide thickness, etc., is discussed and compared to data.",
keywords = "III-V MOS devices, electromigration, oxide breakdown, progressive breakdown",
author = "Felix Palumbo and Moshe Eizenberg and Salvatore Lombardo",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; IEEE International Reliability Physics Symposium, IRPS 2015 ; Conference date: 19-04-2015 Through 23-04-2015",
year = "2015",
month = may,
day = "26",
doi = "10.1109/IRPS.2015.7112737",
language = "英语",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "5A11--5A16",
booktitle = "2015 IEEE International Reliability Physics Symposium, IRPS 2015",
address = "United States",
}