Formation of shallow Schottky contacts to Si using Pt-Si and Pd-Si alloy films

M. Eizenberg; H. Foell; K. N. Tu

doi:10.1063/1.328850

Formation of shallow Schottky contacts to Si using Pt-Si and Pd-Si alloy films

M. Eizenberg^*, H. Foell, K. N. Tu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

A series of codeposited alloy films of Pt-Si with a composition changing from Pt₇₅Si₂₅ to Pt₅₀Si₅₀ and of Pd-Si changing from Pd₇₅Si₂₅ to Pd₆₇Si ₃₃ have been prepared on Si for a systematic study of shallow silicide contacts. The effects of alloy composition and heat treatment on the formation and properties of these contacts have been investigated by I-V measurement of Schottky barrier height, glancing incidence x-ray diffraction, and cross-sectional transmission electron microscopy. Shallow contacts with a depth of about 10 nm and with the Schottky barrier height of PtSi and Pd ₂Si have been achieved.

Original language	English
Pages (from-to)	861-868
Number of pages	8
Journal	Journal of Applied Physics
Volume	52
Issue number	2
DOIs	https://doi.org/10.1063/1.328850
State	Published - 1981
Externally published	Yes

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title = "Formation of shallow Schottky contacts to Si using Pt-Si and Pd-Si alloy films",

abstract = "A series of codeposited alloy films of Pt-Si with a composition changing from Pt75Si25 to Pt50Si50 and of Pd-Si changing from Pd75Si25 to Pd67Si 33 have been prepared on Si for a systematic study of shallow silicide contacts. The effects of alloy composition and heat treatment on the formation and properties of these contacts have been investigated by I-V measurement of Schottky barrier height, glancing incidence x-ray diffraction, and cross-sectional transmission electron microscopy. Shallow contacts with a depth of about 10 nm and with the Schottky barrier height of PtSi and Pd 2Si have been achieved.",

author = "M. Eizenberg and H. Foell and Tu, {K. N.}",

year = "1981",

doi = "10.1063/1.328850",

language = "英语",

volume = "52",

pages = "861--868",

journal = "Journal of Applied Physics",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Formation of shallow Schottky contacts to Si using Pt-Si and Pd-Si alloy films

AU - Eizenberg, M.

AU - Foell, H.

AU - Tu, K. N.

PY - 1981

Y1 - 1981

N2 - A series of codeposited alloy films of Pt-Si with a composition changing from Pt75Si25 to Pt50Si50 and of Pd-Si changing from Pd75Si25 to Pd67Si 33 have been prepared on Si for a systematic study of shallow silicide contacts. The effects of alloy composition and heat treatment on the formation and properties of these contacts have been investigated by I-V measurement of Schottky barrier height, glancing incidence x-ray diffraction, and cross-sectional transmission electron microscopy. Shallow contacts with a depth of about 10 nm and with the Schottky barrier height of PtSi and Pd 2Si have been achieved.

AB - A series of codeposited alloy films of Pt-Si with a composition changing from Pt75Si25 to Pt50Si50 and of Pd-Si changing from Pd75Si25 to Pd67Si 33 have been prepared on Si for a systematic study of shallow silicide contacts. The effects of alloy composition and heat treatment on the formation and properties of these contacts have been investigated by I-V measurement of Schottky barrier height, glancing incidence x-ray diffraction, and cross-sectional transmission electron microscopy. Shallow contacts with a depth of about 10 nm and with the Schottky barrier height of PtSi and Pd 2Si have been achieved.

UR - http://www.scopus.com/inward/record.url?scp=0019533151&partnerID=8YFLogxK

U2 - 10.1063/1.328850

DO - 10.1063/1.328850

M3 - 文章

AN - SCOPUS:0019533151

SN - 0021-8979

VL - 52

SP - 861

EP - 868

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

ER -

Formation of shallow Schottky contacts to Si using Pt-Si and Pd-Si alloy films

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