Fabrication of ETA cells based on ZnO/CuInS2 core/shell heterostructure

Z. Liu; Y. Li; K. Guo; J. Han

doi:10.1179/1753555715Y.0000000031

Fabrication of ETA cells based on ZnO/CuInS₂ core/shell heterostructure

Z. Liu^*, Y. Li, K. Guo, J. Han

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

ZnO/CuInS₂/CuSCN heterostructure was synthetised using ZnO/CuInS₂ core/shell nanorods array as substrate via a low cost electrodeposition method. The as obtained heterostructure could be considered as the main part of typical extremely thin absorber solar cell, since the ZnO nanorods and CuInS₂ layer would serve as the electronic delivery material and light absorber, while the β-CuSCN would play the role of hole conductor. The as obtained heterostructure shows a high absorbing capacity in the visible part of the solar spectrum with a light absorption centre located at ∼550 nm, and the efficiency of the solar cells was measured to be 0.16% using Au as counter electrode.

Original language	English
Pages (from-to)	134-138
Number of pages	5
Journal	Materials Technology
Volume	31
Issue number	3
DOIs	https://doi.org/10.1179/1753555715Y.0000000031
State	Published - 2016
Externally published	Yes

Keywords

CuInS
ETA cell
Electrodeposition
Heterostructure
ZnO

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10.1179/1753555715Y.0000000031

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title = "Fabrication of ETA cells based on ZnO/CuInS2 core/shell heterostructure",

abstract = "ZnO/CuInS2/CuSCN heterostructure was synthetised using ZnO/CuInS2 core/shell nanorods array as substrate via a low cost electrodeposition method. The as obtained heterostructure could be considered as the main part of typical extremely thin absorber solar cell, since the ZnO nanorods and CuInS2 layer would serve as the electronic delivery material and light absorber, while the β-CuSCN would play the role of hole conductor. The as obtained heterostructure shows a high absorbing capacity in the visible part of the solar spectrum with a light absorption centre located at ∼550 nm, and the efficiency of the solar cells was measured to be 0.16% using Au as counter electrode.",

keywords = "CuInS, ETA cell, Electrodeposition, Heterostructure, ZnO",

author = "Z. Liu and Y. Li and K. Guo and J. Han",

note = "Publisher Copyright: {\textcopyright} 2016 Informa UK Limited, trading as Taylor & Francis Group.",

year = "2016",

doi = "10.1179/1753555715Y.0000000031",

language = "英语",

volume = "31",

pages = "134--138",

journal = "Materials Technology",

issn = "1066-7857",

publisher = "Maney Publishing",

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TY - JOUR

T1 - Fabrication of ETA cells based on ZnO/CuInS2 core/shell heterostructure

AU - Liu, Z.

AU - Li, Y.

AU - Guo, K.

AU - Han, J.

PY - 2016

Y1 - 2016

N2 - ZnO/CuInS2/CuSCN heterostructure was synthetised using ZnO/CuInS2 core/shell nanorods array as substrate via a low cost electrodeposition method. The as obtained heterostructure could be considered as the main part of typical extremely thin absorber solar cell, since the ZnO nanorods and CuInS2 layer would serve as the electronic delivery material and light absorber, while the β-CuSCN would play the role of hole conductor. The as obtained heterostructure shows a high absorbing capacity in the visible part of the solar spectrum with a light absorption centre located at ∼550 nm, and the efficiency of the solar cells was measured to be 0.16% using Au as counter electrode.

AB - ZnO/CuInS2/CuSCN heterostructure was synthetised using ZnO/CuInS2 core/shell nanorods array as substrate via a low cost electrodeposition method. The as obtained heterostructure could be considered as the main part of typical extremely thin absorber solar cell, since the ZnO nanorods and CuInS2 layer would serve as the electronic delivery material and light absorber, while the β-CuSCN would play the role of hole conductor. The as obtained heterostructure shows a high absorbing capacity in the visible part of the solar spectrum with a light absorption centre located at ∼550 nm, and the efficiency of the solar cells was measured to be 0.16% using Au as counter electrode.

KW - CuInS

KW - ETA cell

KW - Electrodeposition

KW - Heterostructure

KW - ZnO

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DO - 10.1179/1753555715Y.0000000031

M3 - 文章

AN - SCOPUS:84964669952

SN - 1066-7857

VL - 31

SP - 134

EP - 138

JO - Materials Technology

JF - Materials Technology

IS - 3

ER -

Fabrication of ETA cells based on ZnO/CuInS₂ core/shell heterostructure

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Keywords

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