Electron beam evaporation of oriented Nb films onto GaAs crystals in ultrahigh vacuum

M. Eizenberg; D. A. Smith; M. Heiblum; Armin Segmüller

doi:10.1063/1.97608

Electron beam evaporation of oriented Nb films onto GaAs crystals in ultrahigh vacuum

M. Eizenberg^*, D. A. Smith, M. Heiblum, Armin Segmüller

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Thin layers of Nb, 100-400 Å thick, were grown by electron beam evaporation on (100)GaAs substrates in a molecular beam epitaxy system. The crystallographic relationship between deposit and substrate was monitored in situ by reflection high-energy electron diffraction, and after deposition by transmission electron microscopy and grazing-incidence x-ray diffraction. In spite of the large lattice mismatch (17%) and the low deposition temperature (40-400°C), a quite well oriented deposit with the orientation (100)Nb∥(100)GaAs and [001]Nb∥[011]GaAs was obtained for a substrate temperature of ∼170°C. Changing the substrate temperature from the optimum value of ∼170°C in either direction resulted in a gradual deterioration of the epitaxy.

Original language	English
Pages (from-to)	422-424
Number of pages	3
Journal	Applied Physics Letters
Volume	49
Issue number	7
DOIs	https://doi.org/10.1063/1.97608
State	Published - 1986
Externally published	Yes

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@article{c9da3486ac5744be8d5d981502405d65,

title = "Electron beam evaporation of oriented Nb films onto GaAs crystals in ultrahigh vacuum",

abstract = "Thin layers of Nb, 100-400 {\AA} thick, were grown by electron beam evaporation on (100)GaAs substrates in a molecular beam epitaxy system. The crystallographic relationship between deposit and substrate was monitored in situ by reflection high-energy electron diffraction, and after deposition by transmission electron microscopy and grazing-incidence x-ray diffraction. In spite of the large lattice mismatch (17%) and the low deposition temperature (40-400°C), a quite well oriented deposit with the orientation (100)Nb∥(100)GaAs and [001]Nb∥[011]GaAs was obtained for a substrate temperature of ∼170°C. Changing the substrate temperature from the optimum value of ∼170°C in either direction resulted in a gradual deterioration of the epitaxy.",

author = "M. Eizenberg and Smith, {D. A.} and M. Heiblum and Armin Segm{\"u}ller",

year = "1986",

doi = "10.1063/1.97608",

language = "英语",

volume = "49",

pages = "422--424",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Electron beam evaporation of oriented Nb films onto GaAs crystals in ultrahigh vacuum

AU - Eizenberg, M.

AU - Smith, D. A.

AU - Heiblum, M.

AU - Segmüller, Armin

PY - 1986

Y1 - 1986

N2 - Thin layers of Nb, 100-400 Å thick, were grown by electron beam evaporation on (100)GaAs substrates in a molecular beam epitaxy system. The crystallographic relationship between deposit and substrate was monitored in situ by reflection high-energy electron diffraction, and after deposition by transmission electron microscopy and grazing-incidence x-ray diffraction. In spite of the large lattice mismatch (17%) and the low deposition temperature (40-400°C), a quite well oriented deposit with the orientation (100)Nb∥(100)GaAs and [001]Nb∥[011]GaAs was obtained for a substrate temperature of ∼170°C. Changing the substrate temperature from the optimum value of ∼170°C in either direction resulted in a gradual deterioration of the epitaxy.

AB - Thin layers of Nb, 100-400 Å thick, were grown by electron beam evaporation on (100)GaAs substrates in a molecular beam epitaxy system. The crystallographic relationship between deposit and substrate was monitored in situ by reflection high-energy electron diffraction, and after deposition by transmission electron microscopy and grazing-incidence x-ray diffraction. In spite of the large lattice mismatch (17%) and the low deposition temperature (40-400°C), a quite well oriented deposit with the orientation (100)Nb∥(100)GaAs and [001]Nb∥[011]GaAs was obtained for a substrate temperature of ∼170°C. Changing the substrate temperature from the optimum value of ∼170°C in either direction resulted in a gradual deterioration of the epitaxy.

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U2 - 10.1063/1.97608

DO - 10.1063/1.97608

M3 - 文章

AN - SCOPUS:0006823703

SN - 0003-6951

VL - 49

SP - 422

EP - 424

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Electron beam evaporation of oriented Nb films onto GaAs crystals in ultrahigh vacuum

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