Dopants effects on the interfacial reaction between Co and strained Si0.8Ge0.2 layers

C. Cytermann; E. Holzman; R. Brener; M. Fastow; M. Eizenberg; M. Glück; H. Kibbel; U. König

doi:10.1063/1.366932

Dopants effects on the interfacial reaction between Co and strained Si_0.8Ge_0.2 layers

C. Cytermann^*, E. Holzman, R. Brener, M. Fastow, M. Eizenberg, M. Glück, H. Kibbel, U. König

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Interfacial reactions of cobalt with differently doped Si_0.8Ge_0.2 layers epitaxially grown on silicon, during furnace annealing up to 600 °C, were compared. Undoped and highly boron- or antimony-doped Si_0.8Ge_0.2 strained layers were used for this study. The analytical tools employed were Auger electron spectroscopy, secondary ion mass spectroscopy, x-ray diffraction, and transmission electron microscopy. Both dopants accumulate at the surface as a result of the interfacial reaction with Co but boron also remains trapped between the reacted Co monosilicide region and a thin Co-rich near-surface layer. In addition, the boron-doped sample exhibits a large accumulation of Ge at the interface between the unreacted SiGe and the reacted monosilicide. The latter effect is related to the loss of Ge from the unreacted SiGe layers observed after high-temperature annealing, the B-doped SiGe epilayer undergoing the largest loss at 600 °C, while the Sb-doped epilayer was only slightly affected.

Original language	English
Pages (from-to)	2019-2024
Number of pages	6
Journal	Journal of Applied Physics
Volume	83
Issue number	4
DOIs	https://doi.org/10.1063/1.366932
State	Published - 15 Feb 1998
Externally published	Yes

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title = "Dopants effects on the interfacial reaction between Co and strained Si0.8Ge0.2 layers",

abstract = "Interfacial reactions of cobalt with differently doped Si0.8Ge0.2 layers epitaxially grown on silicon, during furnace annealing up to 600 °C, were compared. Undoped and highly boron- or antimony-doped Si0.8Ge0.2 strained layers were used for this study. The analytical tools employed were Auger electron spectroscopy, secondary ion mass spectroscopy, x-ray diffraction, and transmission electron microscopy. Both dopants accumulate at the surface as a result of the interfacial reaction with Co but boron also remains trapped between the reacted Co monosilicide region and a thin Co-rich near-surface layer. In addition, the boron-doped sample exhibits a large accumulation of Ge at the interface between the unreacted SiGe and the reacted monosilicide. The latter effect is related to the loss of Ge from the unreacted SiGe layers observed after high-temperature annealing, the B-doped SiGe epilayer undergoing the largest loss at 600 °C, while the Sb-doped epilayer was only slightly affected.",

author = "C. Cytermann and E. Holzman and R. Brener and M. Fastow and M. Eizenberg and M. Gl{\"u}ck and H. Kibbel and U. K{\"o}nig",

year = "1998",

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doi = "10.1063/1.366932",

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TY - JOUR

T1 - Dopants effects on the interfacial reaction between Co and strained Si0.8Ge0.2 layers

AU - Cytermann, C.

AU - Holzman, E.

AU - Brener, R.

AU - Fastow, M.

AU - Eizenberg, M.

AU - Glück, M.

AU - Kibbel, H.

AU - König, U.

PY - 1998/2/15

Y1 - 1998/2/15

N2 - Interfacial reactions of cobalt with differently doped Si0.8Ge0.2 layers epitaxially grown on silicon, during furnace annealing up to 600 °C, were compared. Undoped and highly boron- or antimony-doped Si0.8Ge0.2 strained layers were used for this study. The analytical tools employed were Auger electron spectroscopy, secondary ion mass spectroscopy, x-ray diffraction, and transmission electron microscopy. Both dopants accumulate at the surface as a result of the interfacial reaction with Co but boron also remains trapped between the reacted Co monosilicide region and a thin Co-rich near-surface layer. In addition, the boron-doped sample exhibits a large accumulation of Ge at the interface between the unreacted SiGe and the reacted monosilicide. The latter effect is related to the loss of Ge from the unreacted SiGe layers observed after high-temperature annealing, the B-doped SiGe epilayer undergoing the largest loss at 600 °C, while the Sb-doped epilayer was only slightly affected.

AB - Interfacial reactions of cobalt with differently doped Si0.8Ge0.2 layers epitaxially grown on silicon, during furnace annealing up to 600 °C, were compared. Undoped and highly boron- or antimony-doped Si0.8Ge0.2 strained layers were used for this study. The analytical tools employed were Auger electron spectroscopy, secondary ion mass spectroscopy, x-ray diffraction, and transmission electron microscopy. Both dopants accumulate at the surface as a result of the interfacial reaction with Co but boron also remains trapped between the reacted Co monosilicide region and a thin Co-rich near-surface layer. In addition, the boron-doped sample exhibits a large accumulation of Ge at the interface between the unreacted SiGe and the reacted monosilicide. The latter effect is related to the loss of Ge from the unreacted SiGe layers observed after high-temperature annealing, the B-doped SiGe epilayer undergoing the largest loss at 600 °C, while the Sb-doped epilayer was only slightly affected.

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DO - 10.1063/1.366932

M3 - 文章

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SN - 0021-8979

VL - 83

SP - 2019

EP - 2024

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

ER -

Dopants effects on the interfacial reaction between Co and strained Si_0.8Ge_0.2 layers

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