Valley hall transport of photon-dressed quasiparticles in two-dimensional Dirac semiconductors

V. M. Kovalev*, Wang Kong Tse, M. V. Fistul, I. G. Savenko

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


We present a theory of the photovoltaic valley-dependent Hall effect in a two-dimensional (2D) Dirac semiconductor subject to an intense near-resonant electromagnetic field. Our theory captures and elucidates the influence of both the field-induced resonant interband transitions and the nonequilibrium carrier kinetics on the resulting valley Hall transport in terms of photon-dressed quasiparticles (PDQs). The non-perturbative renormalization effect of the pump field manifests itself in the dynamics of the PDQs, with a quasienergy spectrum characterized by dynamical gaps δ η(η is the valley index) that strongly depend on field amplitude and polarization. Nonequilibrium carrier distribution functions are determined by the pump field frequency ω as well as the ratio of intraband relaxation time τ and interband recombination time τ recWe obtain analytic results in three regimes, when (I) all relaxation processes are negligible, (II) τ ≪ τrecand (III) τ ≫ τ recand display corresponding asymptotic dependences on δηand ω. We then apply our theory to 2D transition-metal dichalcogenides, and find a strong enhancement of valley-dependent Hall conductivity as the pump field frequency approaches the transition energies between the pair of spin-resolved conduction and valence bands at the two valleys.

Original languageEnglish
Article number083007
JournalNew Journal of Physics
Issue number8
StatePublished - Aug 2018
Externally publishedYes


  • Photon-dressed quasiparticles
  • Transition-metal dichalcogenides
  • Two-dimensional materials
  • Valley hall effect


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