TiN films were produced by MOCVD of TDMAT followed by H2/N2 plasma treatment and a flash of SiH4. Good properties were observed when interposed between copper and silicon. A small improvement in the barriers integrity was achieved after the SiH4 flash due to the formation of Si3N4.
|Number of pages
|Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
|Published - Jul 2002
|Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces - Santa Fe, NM, United States
Duration: 6 Jan 2002 → 10 Jan 2002