High-quality chemical vapor deposited TiCN films were produced in a single wafer reactor using a metallorganic (TDMAT) precursor. The films have excellent step coverage over high aspect-ratio contacts as well as very low particle content. These properties are obtained because the films are deposited under surface-reaction controlled conditions. The films show also excellent barrier properties against Al and WF6 attack. These properties make this material a superb contact barrier material for ultra-large-scale integrated devices.