TiCN: A new chemical vapor deposited contact barrier metallization for submicron devices

TY - JOUR

T1 - TiCN

T2 - A new chemical vapor deposited contact barrier metallization for submicron devices

AU - Eizenberg, M.

AU - Littau, K.

AU - Ghanayem, S.

AU - Mak, A.

AU - Maeda, Y.

AU - Chang, M.

AU - Sinha, A. K.

PY - 1994

Y1 - 1994

N2 - High-quality chemical vapor deposited TiCN films were produced in a single wafer reactor using a metallorganic (TDMAT) precursor. The films have excellent step coverage over high aspect-ratio contacts as well as very low particle content. These properties are obtained because the films are deposited under surface-reaction controlled conditions. The films show also excellent barrier properties against Al and WF6 attack. These properties make this material a superb contact barrier material for ultra-large-scale integrated devices.

AB - High-quality chemical vapor deposited TiCN films were produced in a single wafer reactor using a metallorganic (TDMAT) precursor. The films have excellent step coverage over high aspect-ratio contacts as well as very low particle content. These properties are obtained because the films are deposited under surface-reaction controlled conditions. The films show also excellent barrier properties against Al and WF6 attack. These properties make this material a superb contact barrier material for ultra-large-scale integrated devices.

UR - http://www.scopus.com/inward/record.url?scp=0001752694&partnerID=8YFLogxK

U2 - 10.1063/1.112693

DO - 10.1063/1.112693

M3 - 文章

AN - SCOPUS:0001752694

SN - 0003-6951

VL - 65

SP - 2416

EP - 2418

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -